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Ушбу ишга иқтибос қилган ишлар

12 та иш

Иш: Method for additional purification of the surface of Si(111) single crystal

  1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 иқтибос
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  3. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    МақолаElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 иқтибос
    ABI

  4. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    МақолаIon-surface interactions and analysisE3S Web of Conferences20234 иқтибос
    ABI

  5. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  6. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    МақолаSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 иқтибос
    ABI

  7. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 иқтибос
    ABI

  8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 иқтибос
    ABI

  9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI

  10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20220 иқтибос
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    МақолаSemiconductor materials and interfacesФизика и техника полупроводников20220 иқтибос
    ABI

  12. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос
    ABI