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Иш: Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

  1. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 иқтибос
    ABI

  3. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос
    ABI

  4. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 иқтибос
    ABI

  5. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20126 иқтибос
    ABI

  6. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Мақола20215 иқтибос
    ABI

  7. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    МақолаSemiconductor materials and interfacesSemiconductors19994 иқтибос
    ABI

  8. Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

    Б.А. Акимов, V. A. Bogoyavlenskii, L. I. Ryabovа +2

    Мақола19994 иқтибос
    ABI

  9. Doping of silicon with selenium by diffusion from the gas phase

    Yu. A. Astrov, V. B. Shuman, L. М. Portsel +1

    Мақола20143 иқтибос
    ABI

  10. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Мақола19983 иқтибос
    ABI

  11. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Мақола19732 иқтибос
    ABI

  12. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19952 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  14. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20001 иқтибос
    ABI

  15. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    МақолаSemiconductor materials and interfacesSemiconductors20151 иқтибос
    ABI