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Ушбу иш иқтибос қилган ишлар

28 та иш

Иш: The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

  1. Silicon Photovoltaic Cells with Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy202015 иқтибос
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    МақолаQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 иқтибос
    ABI

  3. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material

    М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +3

    МақолаSemiconductor materials and interfacesTechnical Physics201910 иқтибос
    ABI

  4. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    МақолаInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 иқтибос
    ABI

  5. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос
    ABI

  6. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

    М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials20228 иқтибос
    ABI

  7. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  8. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос
    ABI

  9. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    МақолаMagnetic Properties and ApplicationsSemiconductors20147 иқтибос
    ABI

  10. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 иқтибос
    ABI

  11. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  12. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос
    ABI

  13. Electron-hole diffusion lengths &gt; 175 μm in solution-grown CH <sub>3</sub> NH <sub>3</sub> PbI <sub>3</sub> single crystals

    Qingfeng Dong, Yanjun Fang, Yuchuan Shao +4

    Мақола20154 иқтибос
    ABI

  14. An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate

    A. A. Md. Monzur-Ul-Akhir, Masayuki Mori, K. Maezawa

    Мақола20192 иқтибос
    ABI

  15. Resistivity of Bulk Silicon and of Diffused Layers in Silicon

    J.C. Irvin

    Мақола19622 иқтибос
    ABI

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