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Иш: Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

The physics of semiconductor devices
R. H. Rediker
Мақола197011 иқтибос
ABI
Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12
Мақола20088 иқтибос
ABI
Deep level centers in silicon carbide: A review
A. А. Lebedev
Шарҳ мақола19996 иқтибос
ABI
Investigation of boron diffusion in 6H-SiC
Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan
Мақола20035 иқтибос
ABI
Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6
МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос
ABI
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6
МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 иқтибос
ABI
Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5
МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
ABI
Oxidation kinetics of hot-pressed silicon carbide
Subhash C. Singhal
Мақола19764 иқтибос
ABI
A new approach in impurity doping of 4H-SiC using silicidation
Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2
Мақола20134 иқтибос
ABI
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
I. G. Atabaev, Kh. N. Juraev, V. A. Pak
МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
ABI
Effect of deep levels on current excitation in 6H-SiC diodes
N.I. Kuznetsov, J. A. Edmond
Мақола19973 иқтибос
ABI
The Method of Solid State Impurity Diffusion and Doping In 4H-SiC
Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1
Мақола20133 иқтибос
ABI
Diffusion of boron in silicon carbide
K. Rüschenschmidt, H. Bracht, Michael Laube +2
Мақола20013 иқтибос
ABI
Vacancy defects in silicon carbide
O. Girka, E. N. Mokhov
Мақола19953 иқтибос
ABI
Boron and aluminum diffusion into 4H–SiC substrates
Andrzej Kubiak, Jacek Rogowski
Мақола20102 иқтибос
ABI
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
Q. Wahab, A. Ellison, Anne Henry +4
Мақола20002 иқтибос
ABI
Power bipolar devices based on silicon carbide
P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov +2
Мақола20052 иқтибос
ABI
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
Philip G. Neudeck, C. Fazi
Мақола19982 иқтибос
ABI
High-temperature diffusion doping of porous silicon carbide
M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1
Мақола20082 иқтибос
ABI
Boron diffusion into 6H-SiC through graphite mask
Stanislav I. Soloviev, Ying Gao, X. Wang +1
Мақола20012 иқтибос
ABI
Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron
Ying Gao, Stanislav I. Soloviev, T. S. Sudarshan
Мақола20012 иқтибос
ABI
Material science and device physics in SiC technology for high-voltage power devices
Tsunenobu Kimoto
Мақола20152 иқтибос
ABI
A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum
E. V. Kalinina, V. Kossov, R. R. Yafaev +2
Мақола20102 иқтибос
ABI
Сарлавҳасиз
Бошқа2 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI

Ушбу иш иқтибос қилган ишлар

The physics of semiconductor devices

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Deep level centers in silicon carbide: A review

Investigation of boron diffusion in 6H-SiC

Oxide film assisted dopant diffusion in silicon carbide

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Influence of Defects on Low Temperature Diffusion of Boron in SiC

Oxidation kinetics of hot-pressed silicon carbide

A new approach in impurity doping of 4H-SiC using silicidation

Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

Effect of deep levels on current excitation in 6H-SiC diodes

The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Diffusion of boron in silicon carbide

Vacancy defects in silicon carbide

Boron and aluminum diffusion into 4H–SiC substrates

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Power bipolar devices based on silicon carbide

Nanosecond Risetime Pulse Characterization of SiC p<sup>+</sup>n Junction Diode Breakdown and Switching Properties

High-temperature diffusion doping of porous silicon carbide

Boron diffusion into 6H-SiC through graphite mask

Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

Material science and device physics in SiC technology for high-voltage power devices

A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

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