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26 ta ish

Ish: Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

  1. Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

    I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12

    Maqola20088 iqtibos
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films20105 iqtibos
    ABI

  3. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  4. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    MaqolaOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 iqtibos
    ABI

  5. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  6. A new approach in impurity doping of 4H-SiC using silicidation

    Chin‐Che Tin, Suwan Mendis, Michelle T. Tin +2

    Maqola20134 iqtibos
    ABI

  7. Effect of deep levels on current excitation in 6H-SiC diodes

    N.I. Kuznetsov, J. A. Edmond

    Maqola19973 iqtibos
    ABI

  8. The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

    Suwan Mendis, Chin-che Tin, Ilkham G. Atabaev +1

    Maqola20133 iqtibos
    ABI

  9. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

    Koji Nakayama, Ryosuke Ishii, Katsunori Asano +3

    Maqola20112 iqtibos
    ABI

  10. Selective doping of 4H–SiC by codiffusion of aluminum and boron

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan +1

    Maqola20012 iqtibos
    ABI

  11. Boron and aluminum diffusion into 4H–SiC substrates

    Andrzej Kubiak, Jacek Rogowski

    Maqola20102 iqtibos
    ABI

  12. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

    Q. Wahab, A. Ellison, Anne Henry +4

    Maqola20002 iqtibos
    ABI

  13. Power bipolar devices based on silicon carbide

    P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov +2

    Maqola20052 iqtibos
    ABI

  14. Nanosecond Risetime Pulse Characterization of SiC p&lt;sup&gt;+&lt;/sup&gt;n Junction Diode Breakdown and Switching Properties

    Philip G. Neudeck, C. Fazi

    Maqola19982 iqtibos
    ABI

  15. High-temperature diffusion doping of porous silicon carbide

    M. G. Mynbaeva, E. N. Mokhov, A. A. Lavrent’ev +1

    Maqola20082 iqtibos
    ABI

  16. Boron diffusion into 6H-SiC through graphite mask

    Stanislav I. Soloviev, Ying Gao, X. Wang +1

    Maqola20012 iqtibos
    ABI

  17. Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

    Ying Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Maqola20012 iqtibos
    ABI

  18. Material science and device physics in SiC technology for high-voltage power devices

    Tsunenobu Kimoto

    Maqola20152 iqtibos
    ABI

  19. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

    E. V. Kalinina, V. Kossov, R. R. Yafaev +2

    Maqola20102 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  24. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  25. Sarlavhasiz

    Boshqa1 iqtibos
    ABI