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24 ta ish

Ish: Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos
    ABI

  2. Modeling Temperature Dependence of The Combined Density of States in Heterostructures with Quantum Wells Under the Influence of a Quantizing Magnetic Field

    У. И. Эркабоев, Sherzodjon A. Ruzaliev, R. G. Rakhimov +1

    Maqola20248 iqtibos
    ABI

  3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 iqtibos
    ABI

  5. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Maqola20185 iqtibos
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  7. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    MaqolaSemiconductor materials and devicesDoklady Physics20074 iqtibos
    ABI

  8. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Maqola20114 iqtibos
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    MaqolaSemiconductor materials and devicesApplied Sciences20203 iqtibos
    ABI

  10. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Maqola20103 iqtibos
    ABI

  11. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Maqola20133 iqtibos
    ABI

  12. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Maqola20093 iqtibos
    ABI

  13. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Maqola20183 iqtibos
    ABI

  14. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos
    ABI

  15. Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

    Mukhammadjon G. Dadamirzaev, Mamura Odiljonovna Kosimova, S. R. Boydedayev +1

    MaqolaGraphene research and applicationsEast European Journal of Physics20242 iqtibos
    ABI

  16. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos
    ABI

  17. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  18. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

    Asen Asenov, R. Balasubramaniam, A. R. Brown +1

    Maqola20032 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  24. Sarlavhasiz

    Boshqa1 iqtibos
    ABI