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Б. Е. Умирзаков

96 works

Karimov Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    ArticlePhotocathodes and Microchannel PlatesTechnical Physics20198 citations
    ABI

  2. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    ArticleSemiconductor materials and interfacesTechnical Physics20208 citations
    ABI

  3. Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment

    M. B. Yusupjanova, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisTechnical Physics20167 citations
    ABI

  4. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    ArticleSemiconductor materials and devicesTechnical Physics20177 citations
    ABI

  5. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

    Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics20156 citations
    ABI

  6. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    ArticleAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 citations
    ABI

  7. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    ArticleTransition Metal Oxide NanomaterialsTechnical Physics20206 citations
    ABI

  8. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 citations
    ABI

  9. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20195 citations
    ABI

  10. Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals

    Б. Е. Умирзаков, J. Sh. Sodiljanov, Д. А. Ташмухамедова +2

    ArticleQuantum Dots Synthesis And PropertiesTechnical Physics Letters20215 citations
    ABI

  11. Effect of implantation of Ba+ and Nb+ ions on the morphology, composition, and emission properties of Мо (111)

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleAdvanced Chemical Physics StudiesJournal of Communications Technology and Electronics20175 citations
    ABI

  12. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    ArticleLaser Material Processing TechniquesTechnical Physics20195 citations
    ABI

  13. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

    Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

    ArticleSemiconductor materials and interfacesTechnical Physics20155 citations
    ABI

  14. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

    Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20204 citations
    ABI

  15. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    ArticleSemiconductor materials and interfacesTechnical Physics20194 citations
    ABI

  16. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    ArticleSemiconductor materials and interfacesSemiconductors20204 citations
    ABI

  17. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20193 citations
    ABI

  18. Determination of the Kinetic Characteristics of the Thermal Desorption and Heterogeneous Reaction of Dissociation of Morphine Molecules on the Surface of Oxidized Tungsten

    G. T. Rakhmanov, Б. Е. Умирзаков, Dilshadbek T. Usmanov

    ArticleChemical Thermodynamics and Molecular StructureJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20233 citations
    ABI

  19. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  20. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    ArticleSurface and Thin Film PhenomenaTechnical Physics20193 citations
    ABI

  21. Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

    З. А. Исаханов, Tulkin Kodirov, A. S. Halmatov +3

    ArticleMetal and Thin Film MechanicsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20173 citations
    ABI

  22. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    ArticleTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters20242 citations
    ABI

  23. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    ArticleSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 citations
    ABI

  24. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    ArticleIon-surface interactions and analysisAIP conference proceedings20222 citations
    ABI

  25. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    ArticleIon-surface interactions and analysisEurasian journal of physics and functional materials20232 citations
    ABI