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Б. Е. Умирзаков

96 works

Institute of Ion-Plasma and Laser Technologies Named of U. Arifov of the Academy of Sciences of the Republic of Uzbekistan, Azerbaijan

  1. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    ArticleSurface and Thin Film PhenomenaOptical Materials X20242 citations
    ABI

  2. A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films

    З. А. Исаханов, М. К. Рузибаева, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20112 citations
    ABI

  3. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 citations
    ABI

  4. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI

  5. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

    Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

    ArticleIon-surface interactions and analysisTechnical Physics20192 citations
    ABI

  6. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

    Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

    ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20031 citations
    ABI

  7. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    ArticleTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 citations
    ABI

  8. Fabrication of Cd–Ba–S Nanoscale Structures on the Surface and in the Near-Surface Region of CdS Films by Implantation with Ba+ Ions

    J. Sh. Sodikjanov, Б. Е. Умирзаков

    ArticleQuantum Dots Synthesis And PropertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 citations
    ABI

  9. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    ArticleAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics20241 citations
    ABI

  10. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations
    ABI

  11. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    ArticleLaser Material Processing Techniques19950 citations
    ABI

  12. The profiles of barium distributions in GaAs doped by low energy barium ions

    Д. А. Ташмухамедова, F.G. Dzhurabekova, Mirzhalilova +1

    ArticleIon-surface interactions and analysis19970 citations
    ABI

  13. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysis19990 citations
    ABI

  14. Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation

    Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleIon-surface interactions and analysisSurface and Coatings Technology20020 citations
    ABI

  15. The influence of ion implantation on emission characteristics conducting and superconducting materials

    Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticlePlasma Diagnostics and Applications20020 citations
    ABI

  16. Octahedral Structure of New Formations in the Boundary Layers of a Polystyrene–Kaolin Composite

    U. Kh. Akhmedov, A. A. Tyshchenko, Б. Е. Умирзаков +2

    ArticleAdsorption, diffusion, and thermodynamic properties of materialsInternational Polymer Science and Technology20050 citations
    ABI

  17. Final and Intermediate Product of Fullerene C<sub>60</sub>on the Boundary Layers of Carbon Black Filled Polystyrene

    U. Kh. Akhmedov, G. M. Tukhtaev, Б. Е. Умирзаков

    ArticleCarbon Nanotubes in CompositesInternational Polymer Science and Technology20060 citations
    ABI

  18. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20080 citations
    ABI

  19. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    ArticleCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20130 citations
    ABI

  20. Creation of a mathematical model to identify short circuits in power lines

    A.N. Alyunov, O.S. Vyatkina, Irina Akhmetova +2

    ArticleElectric Power Systems and ControlE3S Web of Conferences20190 citations
    ABI

  21. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20210 citations
    ABI

  22. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 citations
    ABI

  23. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
    ABI

  24. Effect of Implantation of Ba+ Ions on the Composition, Electronic and Crystal Structure of W(111) and WO2 Surfaces

    Б. Е. Умирзаков, Д. А. Ташмухамедова, F. Ya. Khudaykulov

    ArticleGas Sensing Nanomaterials and SensorsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20220 citations
    ABI

  25. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    ArticleIon-surface interactions and analysisЖурнал технической физики20220 citations
    ABI