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Technical Physics Letters

356 works

Journal · ISSN 1063-7850

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 citations
    ABI

  2. Investigation of the influence of residual stresses on the thermophysical and thermoelastic properties of silicon nitride ceramic by photothermal and photoacoustic methods

    К. Л. Муратиков, A. L. Glazov, D. N. Rose +1

    ArticleThermography and Photoacoustic TechniquesTechnical Physics Letters19981 citations
    ABI

  3. Determination of fluctuations of the electron temperature and density in an ionizationunstable inert-gas plasma in a magnetogasdynamic channel

    T. A. Lapushkina, E. A. D’yakonova, R. V. Vasil’eva

    ArticlePlasma Diagnostics and ApplicationsTechnical Physics Letters19981 citations
    ABI

  4. Thermoelectric converter

    A. V. Karimov, Sh. N. Bakhronov

    ArticleAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters19991 citations
    ABI

  5. Silicon single crystals ion-doped with ytterbium

    D. É. Nazyrov, Semyon Goncharov, А. В. Суворов

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20001 citations
    ABI

  6. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20021 citations
    ABI

  7. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters20021 citations
    ABI

  8. Synthesis and study of a perovskite phase of yttrium barium metal oxide ceramics

    M. U. Kalanov, Э. М. Ибрагимова

    ArticleAdvancements in Solid Oxide Fuel CellsTechnical Physics Letters20021 citations
    ABI

  9. Silicon carbide materials obtained from rice husk

    G. T. Adylov, Sh. A. Faiziev, M. S. Paizullakhanov +2

    ArticleAdvanced ceramic materials synthesisTechnical Physics Letters20031 citations
    ABI

  10. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

    О. О. Маматкаримов, Р. Х. Хамидов

    ArticleForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 citations
    ABI

  11. Calcium carbide synthesis using a solar furnace

    M. S. Paizullakhanov, Sh. A. Faiziev

    ArticlePetroleum Processing and AnalysisTechnical Physics Letters20061 citations
    ABI

  12. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

    N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

    ArticleThermography and Photoacoustic TechniquesTechnical Physics Letters20071 citations
    ABI

  13. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    ArticleIndustrial Engineering and TechnologiesTechnical Physics Letters20081 citations
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 citations
    ABI

  15. Stoichiometry, phase composition, and properties of superhard nanostructured Ti-Hf-Si-N coatings obtained by deposition from high-frequency vacuum-arc discharge

    A. D. Pogrebnyak, A. P. Shpak, В. М. Береснев +7

    ArticleMetal and Thin Film MechanicsTechnical Physics Letters20111 citations
    ABI

  16. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20201 citations
    ABI

  17. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 citations
    ABI

  18. Application of ion implantation for synthesis of copper nanoparticles in a zinc oxide matrix for obtaining new nonlinear optical materials

    А. Л. Степанов, Р. И. Хайбуллин, N. Can +4

    ArticleNonlinear Optical Materials StudiesTechnical Physics Letters20041 citations
    ABI

  19. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    ArticleChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20171 citations
    ABI

  20. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

    ArticleSemiconductor materials and interfacesTechnical Physics Letters19991 citations
    ABI

  21. Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions

    Б. Сапаев, А. С. Саидов

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 citations
    ABI

  22. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

  23. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

  24. Single crystals of TlIn1 – x Co x Se2 (0 ≤ x ≤ 0.5) solid solutions as effective materials for semiconductor tensometry

    S. Kh. Umarov, И. Нуритдинов, Zh. Dzh. Ashurov +1

    ArticleSolid-state spectroscopy and crystallographyTechnical Physics Letters20171 citations
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 citations
    ABI