Semiconductor Quantum Structures and Devices

469 works

Determination of potential distribution in a three-barrier structure
D. M. Yodgorova, Physics-Sun", e-mail: [email protected]
ArticleSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20060 citations
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An injection-type field-emission photodiode
Abdulaziz V. Karimov, D. M. Yodgorova
ArticleAdvanced Semiconductor Detectors and MaterialsThe Scientific Issues of Ternopil Volodymyr Hnatiuk National Pedagogical University Series pedagogy20060 citations
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Light emitting diodes structures obtained by overlapping the liquid phase epitaxy and gas phase diffusion of Zn
А. Кутлимратов, A.Sh. Davletova
ArticleAdvanced Semiconductor Detectors and Materials20060 citations
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Mechanism of drain current's saturation in the field transistor with p-n-junction
D. M. Yodgorova
ArticleAdvancements in Semiconductor Devices and Circuit DesignDOAJ (DOAJ: Directory of Open Access Journals)20060 citations
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Physical-technological bases of reception sharp p–n-transition
A. V. Karimov, D. M. Yodgorova, Sh.sh. Yuldashev +1
ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 citations
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Estimation of redistribution of potential in three-barrier structure
A. V. Karimov, D. M. Yodgorova, Sh. Sh. Boltaeva +1
ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 citations
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Research impurity of a photoeffect in two-barrier p-n-m-structure
D. М. Yodgorova, F. M. Ashrapov
ArticleSemiconductor materials and interfacesDOAJ (DOAJ: Directory of Open Access Journals)20060 citations
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Investigations of the energetic and thermal characteristics of a module based on a Fresnel lens and a hetero-photo-converter in the AlGaAs-GaAs system
M. Mirzabaev, K. Rasulov, A. Komilov +1
Articlesolar cell performance optimizationApplied Solar Energy20070 citations
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Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier
Nigmatulla Yunusov, R.K. Atametov, Sh.N. Yuldasheva
ArticleSemiconductor Lasers and Optical Devices20070 citations
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Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy
V. P. Popov, I. E. Tyschenko, Elexander Cherkov +3
ArticleSilicon Nanostructures and PhotoluminescenceECS Transactions20070 citations
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Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons
D. B. Él’murotova, Э. М. Ибрагимова
ArticleTerahertz technology and applicationsSemiconductors20070 citations
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Influence of gamma radiation on the spectral characteristics of heterophotoconverters with microrelieved surface on the heteroboundary
M. Mirzabaev, K. Rasulov, A. A. Abakumov
ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20070 citations
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Optimization of carrier concentration distribution across epitaxial layer thickness
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2
ArticleSemiconductor Quantum Structures and DevicesSHILAP Revista de lepidopterología20070 citations
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Features of the photo-electric characteristics of photoelectric converter of structures
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +3
ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 citations
ABI
Optimization of the concentration’s distribution of the carriers on thickness of epitaxial layers
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2
ArticleSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 citations
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Using laser sputtering to obtain semiconductor nanoheterostructures
Б. Н. Звонков, О. В. Вихрова, Yu. A. Danilov +6
ArticleSemiconductor Quantum Structures and DevicesJournal of Optical Technology20080 citations
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Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials
T. E. Slobodyan, K. A. Bulashevich, S. Yu. Karpov
ArticleGaN-based semiconductor devices and materialsSemiconductors20080 citations
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Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution
N. A. Matchanov
ArticleSemiconductor materials and interfacesTechnical Physics20080 citations
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Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy
P. B. Parchinskiy, Fu Yu, Yousuk Cho +1
ArticleSemiconductor Quantum Structures and DevicesJournal of Crystal Growth20080 citations
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Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region
A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1
ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 citations
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Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2
ArticleSemiconductor materials and interfacesApplied Solar Energy20080 citations
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Pinning structure of dimensional phonon resonance in quantum wires
B. É. Éshpulatov, Э. У. Арзикулов
ArticleSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20080 citations
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Optical FET output characteristics research in light-activated mode
D. M. Yodgorova
ArticleSemiconductor Lasers and Optical DevicesRadioelectronics and Communications Systems20080 citations
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Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface
A. A. Akopyan, Kh. N. Bachronov, O. Yu. Borkovskaya +5
Articlesolar cell performance optimizationSemiconductors20090 citations
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Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences
A. B. Kamalov
ArticleSemiconductor materials and interfacesRadioelectronics and Communications Systems20090 citations
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