Semiconductor Quantum Structures and Devices

469 works

Near-Field Induced FIR Josephson-Detection by c-Axis-Oriented YBa2Cu3O7-δ-Films
E. Zepezauer, A. Kalbeck, Sergey Ganichev +2
ArticlePhysics of Superconductivity and MagnetismInternational Journal of Infrared and Millimeter Waves20000 citations
ABI
Acoustical studies of the high-frequency hopping conductivity in the quantum Hall regime
Yu. M. Galperin, I. L. Drichko, A. M. Diakonov +2
ArticleQuantum and electron transport phenomenaUltrasound20000 citations
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Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models
G. F. Karavaev, В. Н. Чернышов
ArticleSemiconductor Quantum Structures and DevicesSemiconductors20010 citations
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Rapid thermal annealing of gallium arsenide implanted with sulfur ions
V. M. Ardyshev, M. V. Ardyshev
ArticleSemiconductor materials and interfacesSemiconductors20020 citations
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Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures
V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3
ArticleSemiconductor Quantum Structures and DevicesCrystal Research and Technology20020 citations
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Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures
V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3
ArticleAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology20020 citations
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Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation
Д. А. Ташмухамедова, Б. Е. Умирзаков
ArticleIon-surface interactions and analysisSurface and Coatings Technology20020 citations
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Radiation-stimulated processes in CdTe solar cells
Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov
ArticleChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20030 citations
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<title>Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs</title>
E. F. Venger, Galina N. Semenova, Yevgen Y. Braylovsky +6
ArticleAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE20030 citations
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Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga1-xMnxAs Trilayer Structures
Sh. U. Yuldashev, Yongmin Kim, Nayoung Kim +6
ArticleMagnetic properties of thin films20030 citations
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Effect of laser processing on gallium arsenide device structures
S.E. Bekbergenov
ArticleSemiconductor Quantum Structures and Devices20040 citations
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Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides
D. M. Yodgorova
ArticleSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20040 citations
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IR-radiating diodes made of GaAs by liquid-phase epitaxy and gas-phase Zn doping
А. Кутлимратов
ArticleSemiconductor Quantum Structures and Devices20040 citations
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SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions
A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1
ArticleSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 citations
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The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects
V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin
ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 citations
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Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere
M. Akhmedova, А. В. Смирнов
ArticleSemiconductor Quantum Structures and Devices20050 citations
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Effect of pressure on the properties of a silicon-glass interface
С. И. Власов, M. A. Ergasheva, T. P. Adylov
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters20050 citations
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Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese
М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2
ArticleSemiconductor materials and interfacesSemiconductors20050 citations
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Investigation of the electrical characteristics of reteroepitaxial structures as function of microrelief and manufacturing technology features
N. L. Dmitruk, A. V. Karimov, Р. В. Конакова +2
Articlesolar cell performance optimization20050 citations
ABI
hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction
A. V. Karimov, Physics-Sun"
ArticleSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20050 citations
ABI
Effect of the grain boundaries on the conductivity and current transport in II–VI films
T.M. Razykov, Smagul Karazhanov, A. Yu. Leĭderman +2
ArticleChalcogenide Semiconductor Thin FilmsSolar Energy Materials and Solar Cells20060 citations
ABI
Electronic theory of irradiation-induced disoerdering and annealing in semiconductors
A. T. Mamadalimov, Б. Л. Оксенгендлер, N. N. Turaeva
ArticleSemiconductor Quantum Structures and DevicesRussian Physics Journal20060 citations
ABI
Magneto‐transport properties of NiMnSb thin films on InSb single crystals: Negative giant magnetoresistance
S. Gardelis, John Androulakis, Z. Viskadourakis +5
ArticleMagnetic properties of thin filmsphysica status solidi (a)20060 citations
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DARK CURRENTS AND IMPACT IONIZATION COEFFICIENTS IN THE <font>InP</font>-<font>InGaAsP</font> DOUBLE HETEROSTRUCTURES
Mehmet Özer, M. Ahmetoğlu, N. APRAILOV
ArticleSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20060 citations
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Scattering of holes by the GaAs/AlAs (111) and (110) interfaces
G. F. Karavaev, В. Н. Чернышов
ArticleSemiconductor Quantum Structures and DevicesSemiconductors20060 citations
ABI