Semiconductor Quantum Structures and Devices

469 works

Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Growth of InAs photodiode structures from metalorganic compounds
S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
ABI
Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy
M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
ABI
Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy
A. D. Bondarev, D. A. Vinokurov, V. A. Kapitonov +3
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Spontaneous long-wavelength interlevel emission in quantum-dot laser structures
L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region
В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Extraction of current carriers by photons in a quantum well
Rustam Yavkachovich Rasulov, Yu. E. Salenko, T. Éski +1
ArticleSemiconductor Quantum Structures and DevicesPhysics of the Solid State19980 citations
ABI
Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers
T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
ABI
Behavior of epitaxial GaAs layers as α particle detectors
V. M. Botnaryuk, Yu. V. Zhilyaev, А. М. Иванов +2
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 citations
ABI
Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures
S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
ArticleGaN-based semiconductor devices and materialsMaterials science forum19980 citations
ABI
Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells
С. И. Борисенко, G. F. Karavaev
ArticleSemiconductor Quantum Structures and DevicesSemiconductors19980 citations
ABI
High-voltage optoelectronic voltage converter using a cascade of tunnel-coupled p+-i-n+ diodes
Yu. T. Rebane, Yu. G. Shreter
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
ABI
Excitonic waveguiding and lasing in wide bandgap semiconductor
N. N. Ledentsov
ArticleSemiconductor Quantum Structures and DevicesPhysics of the Solid State19980 citations
ABI
Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy
С. И. Степанов, D. Tsvetkov, A. E. Cherenkov
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19980 citations
ABI
Influence of Frenkel's effect on the non-ideality coefficient of p-n junction in microwave field
G. Gulyamov, М. Г. Дадамирзаев
ArticleSemiconductor Quantum Structures and DevicesUzbekiston Fizika Zhurnali19980 citations
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Radiation defects in semiconductors under hydrostatic pressure
V. N. Brudnyı̆
ArticleRare-earth and actinide compoundsSemiconductors19990 citations
ABI
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov +4
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
ABI
Use of lead as a neutral solvent for obtaining solid Ga1−xInxAsySb1−y solutions
И. А. Андреев, E. V. Kunitsyna, Yu. V. Solov’ev
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 citations
ABI
Electrical properties of Schottky diodes using high-resistivity CdTe crystals
V. O. Ukrainets, Г. А. Ильчук, N. A. Ukrainets +2
ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19990 citations
ABI
AlGaAsSb lasers emitting in the 1.6 μm region
T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov +2
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 citations
ABI
<title>Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE</title>
E. F. Venger, Yu. G. Sadof’ev, Galina N. Semenova +7
ArticleAdvanced Semiconductor Detectors and MaterialsProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE19990 citations
ABI
Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics
L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3
ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 citations
ABI
Photoinduced self-organization of gallium nanowires on a GaN surface
D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
ABI
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3
ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
ABI