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Silicon Nanostructures and Photoluminescence

380 works

  1. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    ArticleSemiconductor materials and interfacesInorganic Materials20080 citations
    ABI

  2. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 citations
    ABI

  3. Silicon Cluster Aggregation in Silica Layers

    Hans Joachim Fitting, Lena F. Kourkoutis, Roushdey Salh +4

    ArticleSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 citations
    ABI

  4. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
    ABI

  5. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

    A.Sh. Davletova, Smagul Karazhanov

    ArticleSemiconductor materials and interfacesInorganic Materials20090 citations
    ABI

  6. Differential thermal analysis of porous silicon

    A. A. Nechitaylov, N. V. Glebova

    ArticleSilicon Nanostructures and PhotoluminescenceRussian Journal of Applied Chemistry20090 citations
    ABI

  7. Particle in nonuniform potential field of photovoltaic devices

    V. I. Fedulov, R. A. Zakhidov, A. I. Anarbaev

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20090 citations
    ABI

  8. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

    А. В. Новиков, Artem N. Yablonskiy, V. V. Platonov +3

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20100 citations
    ABI

  9. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    ArticleSemiconductor materials and interfacesSemiconductors20100 citations
    ABI

  10. Experimental setup for determining the thermal conductivity of semiconductor solar cells

    K. A. Tursunmetov, H. Yu. Mavlyanov, U. K. Valiev +1

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20100 citations
    ABI

  11. Raman scattering of light in semiconductor wires

    B. É. Éshpulatov, Э. У. Арзикулов, D. Sh. Khuzhanova

    ArticleSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20100 citations
    ABI

  12. Injection-voltaic-controlled current generator

    Kh. K. Aripov, N. B. Alimova, Kh. Kh. Bustanov +2

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20100 citations
    ABI

  13. The infrared photodetector for range 1,5 † 8 micrometer on the base of silicon with multi-charged clusters

    Х. М. Илиев, С. Б. Исамов, М. Х. Маджитов +2

    ArticleCalibration and Measurement Techniques20100 citations
    ABI

  14. The γ radiation effect on silicon properties with nanoclusters of manganese atoms

    K.A. Ismaylov, Х. М. Илиев, Z.M. Saparniyazova +2

    ArticleCrystallography and Radiation Phenomena20100 citations
    ABI

  15. The temperature detector on the basis of silicon with nanoclusters of nickel atoms

    S. S. Nasriddinov

    ArticleGas Sensing Nanomaterials and Sensors20100 citations
    ABI

  16. Formation of nanoclusters of gadolinium atoms in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +1

    ArticleSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20110 citations
    ABI

  17. Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

    Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3

    ArticleIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 citations
    ABI

  18. The possibility of multistage structures formation on the base of silicon with nickel atoms clusters

    Х. М. Илиев, Z.M. Saparniyazova, О. Э. Саттаров +2

    ArticleMaterial Properties and Applications20110 citations
    ABI

  19. The modulation of the base layer conductivities in p + -n-n + -structures on the basis of polycrystalline silicon

    R. Aliev, E. Mukhtarov

    ArticleAdvanced Materials and Semiconductor TechnologiesUzbekiston Fizika Zhurnali20110 citations
    ABI

  20. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    ArticleGlass properties and applicationsSurface Engineering and Applied Electrochemistry20120 citations
    ABI

  21. Investigation of the Nanostructures Formation in the Irradiated by γ-Quanta Single-Crystal Silicon with Ultrasonic Method

    Turdali Khaydarov, Izida Khamidovna Abdukadirova, Yuriy Karimov

    ArticleIon-surface interactions and analysisAdvances in Materials Physics and Chemistry20120 citations
    ABI

  22. Temperature-induced properties of industrial silicon produced by repeated remelting in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Kh. M. Suleimanov +1

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20120 citations
    ABI

  23. Size‐dependent structural properties of quasi‐one‐dimensional silicon clusters

    F. T. Umarova, A. B. Normurodov, N. N. Turaeva

    ArticleSilicon Nanostructures and PhotoluminescencePhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20120 citations
    ABI

  24. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 citations
    ABI

  25. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20130 citations
    ABI