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Silicon Nanostructures and Photoluminescence

380 works

  1. On the stability of optical properties of antireflection coatings for solar cells based on a silicon-silicon-oxide mixture

    U. Kh. Gaziev, M. U. Dzhanklych, В. Г. Дыскин +1

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20130 citations
    ABI

  2. Mobility of charge carriers in silicon with multicharged nano clusters

    М. К. Бахадырханов, С. Б. Исамов, K. S. Ayupov +2

    ArticleNanowire Synthesis and Applications20130 citations
    ABI

  3. Study of plasmonic effect in silicon solar cells with silver nanoparticles

    Komiljon Yakubov, Jaksilik Zhanabergenov, Sharibay Turemuratov +1

    ArticleSilicon Nanostructures and PhotoluminescenceNanomaterials and Energy20150 citations
    ABI

  4. Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

    А. С. Саидов, A. Yu. Leĭderman

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20150 citations
    ABI

  5. Structure and Charge States of the Selected Hydrogenated Silicon Clusters Si2-Si8 by Non-Conventional Tight-Binding Method

    A. P. Mukhtarov, A. B. Normurodov, N. T. Sulaymonov +2

    ArticleIon-surface interactions and analysisJournal of Nano- and Electronic Physics20160 citations
    ABI

  6. Change in characteristics of the band structure of oxide materials at high temperatures

    I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

    ArticleSemiconductor materials and devicesHigh Temperature20160 citations
    ABI

  7. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Articlenanoparticles nucleation surface interactionsJournal of Modern Physics20160 citations
    ABI

  8. On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation

    Timur Saliev, S. L. Lutpullaev, A. Kutlimuratov

    ArticleGaN-based semiconductor devices and materialsApplied Solar Energy20160 citations
    ABI

  9. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    ArticleSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials20180 citations
    ABI

  10. Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

    А. С. Саидов, U. Kh. Rakhmonov, A. Yu. Leĭderman

    ArticleSemiconductor materials and interfacesApplied Solar Energy20180 citations
    ABI

  11. Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

    А. С. Саидов, А.Ю. Лейдерман, Sh. N. Usmonov +1

    ArticleSilicon Nanostructures and PhotoluminescenceФизика и техника полупроводников20180 citations
    ABI

  12. Some Features of Photoelectrical Properties of Highly Efficient Solar Cells Based on Si

    Linda Boudjemila, Viktor Krasnoshchekov, Shoirbek Olimov +3

    ArticleAdvanced Materials and Semiconductor Technologies20200 citations
    ABI

  13. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

    Shoikrom I. Askarov, Bashirulla B. Sharipov, Shokhista Saliyeva +3

    ArticleSilicon Nanostructures and PhotoluminescenceAmerican Journal of Aerospace Engineering20200 citations
    ABI

  14. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    ArticleSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 citations
    ABI

  15. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

    A. Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev

    ArticleSilicon and Solar Cell TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20200 citations
    ABI

  16. <i>Ab initio</i> investigation of ultrasmall silicon nanocrystal doping by phosphorous

    Shermakhmat Makhkamov, F. T. Umarova, A. B. Normurodov +3

    ArticleSilicon Nanostructures and PhotoluminescenceInternational Journal of Modern Physics B20200 citations
    ABI

  17. Some features of selection conditions and manufacturing technology for highly efficient thin-film solar cells based on Si

    Shoirbek Olimov, Noufu Chen, Anarkhan Kasimakhunova

    ArticleSilicon and Solar Cell TechnologiesIOP Conference Series Earth and Environmental Science20200 citations
    ABI

  18. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

    M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20200 citations
    ABI

  19. MODELING METAL NANOPARTICLES INFLUENCE TO PROPERTIES OF SILICON SOLAR CELLS

    Jasurbek Gulomov, Р. Алиев, Murad Nasirov +1

    ArticleSilicon Nanostructures and PhotoluminescenceZenodo (CERN European Organization for Nuclear Research)20200 citations
    ABI

  20. Quantum-Chemical Calculations of Pure and Phosphorous Doped Ultra-small Silicon Nanocrystals

    Sh. Makhkamov, F. T. Umarova, A. B. Normurodov +4

    ChapterSilicon Nanostructures and PhotoluminescenceNATO science for peace and security series. A, Chemistry and biology20200 citations
    ABI

  21. α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal

    M. U. Kalanov, A. V. Khugaev

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20210 citations
    ABI

  22. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    ArticleSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 citations
    ABI

  23. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 citations
    ABI

  24. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    ArticleSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 citations
    ABI

  25. EFFECT OF GADOLINIUM ATOMS ON DEFECT FORMATION IN SILICON DOPED WITH MOLYBDENUM IMPURITIES

    Shakhrukh Kh. Daliev, Anifa Paluanova

    ArticleSilicon Nanostructures and PhotoluminescenceEuropean Science Review20210 citations
    ABI