Semiconductor materials and interfaces

771 works

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   ArticleGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 citations

   ABIABI:AkademIndex/openalex/2019.article.001077

2. Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

   Т. Т. Muratov

   ArticleSilicon and Solar Cell TechnologiesSemiconductors20190 citations

   ABIABI:AkademIndex/openalex/2019.article.001564

3. Influence of oxygen ion implantation on composition and structure of free nanofilm Si/Cu system

   З. А. Исаханов, М. К. Рузибаева, Sh.I. Khamrokulov +3

   ArticleAdvanced Surface Polishing Techniques20190 citations

   ABIABI:AkademIndex/openalex/2019.article.002075

4. Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs

   O. A. Abdulkhaev, Anvar A’zamovich Yakubov, F. A. Giyasova +3

   ArticleSemiconductor materials and interfaces2020 International Conference on Information Science and Communications Technologies (ICISCT)20200 citations

   ABIABI:AkademIndex/openalex/2020.article.001360

5. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

   А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

   ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20200 citations

   ABIABI:AkademIndex/openalex/2020.article.001584

6. Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

   Shoikrom I. Askarov, Bashirulla B. Sharipov, Shokhista Saliyeva +3

   ArticleSilicon Nanostructures and PhotoluminescenceAmerican Journal of Aerospace Engineering20200 citations

   ABIABI:AkademIndex/openalex/2020.article.002199

7. Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

   О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

   ArticleSemiconductor materials and interfacesФизика и техника полупроводников20200 citations

   ABIABI:AkademIndex/openalex/2020.article.002405

8. NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)

   Gulkhayo Oybekovna Akbarova

   ArticleAdvancements in Semiconductor Devices and Circuit DesignEPRA International Journal of Research & Development (IJRD)20200 citations

   ABIABI:AkademIndex/openalex/2020.article.002924

9. Effect of Radiation 60Со on the Photosensitivity of Overcompensated Silicon

   Mahmudov Sherzod Axmadovich, Mirzaraimov Johongir Zokirjonovich, Rafikov Avaz Karimjonovich

   ArticleSilicon and Solar Cell TechnologiesInternational Journal of Progressive Sciences and Technologies (Medical University Varna)20200 citations

   ABIABI:AkademIndex/openalex/2020.article.003038

10. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    ArticleSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 citations

    ABIABI:AkademIndex/openalex/2020.article.003160

11. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

    A. Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev

    ArticleSilicon and Solar Cell TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20200 citations

    ABIABI:AkademIndex/openalex/2020.article.003181

12. Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)

    Sultanov N.A., R. T., Zokirjon Mirzajonov +1

    ArticleSemiconductor materials and interfacesThe American Journal of Applied Sciences20200 citations

    ABIABI:AkademIndex/openalex/2020.article.003387

13. Carrier Energy Shift Influence on Quantum Oscillation Phenomena

    G. Gulamov, K. B. Umarov, D. Zokirova

    ArticleSemiconductor materials and interfacesInternational Journal of Progressive Sciences and Technologies (Medical University Varna)20200 citations

    ABIABI:AkademIndex/openalex/2020.article.003589

14. Study of the influence of the phase composition and crystal structure of FexNi100−x nanostructures on the efficiency of using lithium-ion batteries as anode materials

    Daryn B. Borgekov, N.A. Hlebnikov, Dmitriy I. Shlimas +1

    ArticleElectric Power Systems and ControlEurasian journal of physics and functional materials20200 citations

    ABIABI:AkademIndex/openalex/2020.article.003954

15. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

    M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20200 citations

    ABIABI:AkademIndex/openalex/2020.article.004106

16. Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleAdvanced Materials and Semiconductor TechnologiesPhysics of the Solid State20210 citations

    ABIABI:AkademIndex/openalex/2021.article.000552

17. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al₂O₃‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    ArticleIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20210 citations

    ABIABI:AkademIndex/openalex/2021.article.002256

18. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20210 citations

    ABIABI:AkademIndex/openalex/2021.article.004233

19. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    ArticleSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 citations

    ABIABI:AkademIndex/openalex/2021.article.004376

20. Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction

    Komiljon Yakubov, Mutabar Latipova, Alibek Qodirov

    ArticleSemiconductor materials and interfacesBulletin of Science and Practice20210 citations

    ABIABI:AkademIndex/openalex/2021.article.004785

21. Iron administration in gallium arsenide

    Ergash Yuldashevich Turaev, Akmal Sattorov

    ArticleSemiconductor materials and interfacesACADEMICIA An International Multidisciplinary Research Journal20210 citations

    ABIABI:AkademIndex/openalex/2021.article.006414

22. Experimental and theoretical study of the effect of bombardment with Ar⁺ ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20210 citations

    ABIABI:AkademIndex/openalex/2021.article.007249

23. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    ArticleSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 citations

    ABIABI:AkademIndex/openalex/2021.article.007517

24. Auger Recombination in Semiconductors

    М. Н. Аликулов

    ArticleSurface and Thin Film Phenomena20210 citations

    ABIABI:AkademIndex/openalex/2021.article.008850

25. INFLUENCE OF TEMPERATURE ON FILL FACTOR OF I-V CHARACTERISTICS OF ILLUMINATED SOLAR CELLS

    I. T. Rajapov, Behzod Kuchkarov, M. O. Turaeva

    ArticleSilicon and Solar Cell TechnologiesWeb of Scientist: International Scientific Research Journal20210 citations

    ABIABI:AkademIndex/openalex/2021.article.009352