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I. R. Bekpulatov

Работ: 45

Institute of Fire Safety of the Ministry of Emergencies of the Republic of Uzbekistan

  1. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2019Цитирований: 2
    ABI

  2. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    СтатьяIon-surface interactions and analysisEurasian journal of physics and functional materials2023Цитирований: 2
    ABI

  3. Аnаlysis оf Na-А zeоlite bаsed оn kаоlin using аn X-rаy diffrаctоmeter

    Muxlis Оydinоv, Bakhrom Igаmоv, I. R. Bekpulatov +2

    СтатьяElectric Power Systems and ControlChemical Bulletin of Kazakh National University2024Цитирований: 2
    ABI

  4. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1
    ABI

  5. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    СтатьяSemiconductor materials and devicesAIP conference proceedings2024Цитирований: 1
    ABI

  6. Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

    B.B. Gaibnazarov, Gunel Imanova, Ш. Т. Хожиев +5

    СтатьяAdvanced Materials and Semiconductor TechnologiesIntegrated ferroelectrics2023Цитирований: 1
    ABI

  7. Correction: Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    СтатьяDiamond and Carbon-based Materials ResearchJournal of Porous Materials2024Цитирований: 1
    ABI

  8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1
    ABI

  9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1
    ABI

  10. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    СтатьяSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials2018Цитирований: 0
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2022Цитирований: 0
    ABI

  12. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0
    ABI

  13. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

    Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

    Статьяnanoparticles nucleation surface interactions2024Цитирований: 0
    ABI

  14. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfaces2024Цитирований: 0
    ABI

  15. Correlation between thickness-dependent morphology, phase structure, and vibrational properties of TiO2 thin films deposited via DC magnetron sputtering: A multi-technique characterization approach

    Б.Д. Игамов, I. R. Bekpulatov, A.M. Normamatov +2

    СтатьяZnO doping and propertiesNext Materials2025Цитирований: 0
    ABI

  16. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

    Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

    СтатьяSemiconductor materials and interfacesNext Materials2025Цитирований: 0
    ABI

  17. Electrophysical Properties and Surface Characteristics of BaTiO <sub>3</sub> Thin Films Produced by Ion-Plasma Method

    K.T. Dovranov, Muradulla Normuradov, I. R. Bekpulatov +6

    СтатьяFerroelectric and Piezoelectric Materials2025Цитирований: 0
    ABI

  18. Surface Morphology of Ni/GaAs Thin Films Produced by Ion-Plasma Method

    K.T. Dovranov, Shakhnoza Jurayeva, Muradulla Normuradov +6

    СтатьяSurface Roughness and Optical Measurements2025Цитирований: 0
    ABI

  19. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    СтатьяZnO doping and propertiesOptics Communications2025Цитирований: 0
    ABI

  20. Computer modeling of the adsorption of C20 fullerene molecules on reconstructed silicon Si(001) 2 × 1 and Si(111) 7 × 7 surfaces

    I. Z. Urolov, I. D. Yadgarov, I. R. Bekpulatov +1

    СтатьяFullerene Chemistry and ApplicationsTheoretical Chemistry Accounts2026Цитирований: 0
    ABI