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I. R. Bekpulatov

Работ: 45

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  6. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  7. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  8. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  9. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    СтатьяSurface Roughness and Optical MeasurementsIntegrated ferroelectrics2024Цитирований: 12
    ABI

  10. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9
    ABI

  11. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  12. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  13. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    СтатьяX-ray Diffraction in CrystallographyJournal of Crystal Growth2024Цитирований: 8
    ABI

  14. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    СтатьяSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series2023Цитирований: 7
    ABI

  15. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2024Цитирований: 6
    ABI

  16. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics2024Цитирований: 6
    ABI

  17. Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

    I. R. Bekpulatov, Gunel Imanova, D.Kh. Nabiev +4

    СтатьяSemiconductor materials and interfacesCeramics International2025Цитирований: 5
    ABI

  18. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    СтатьяSemiconductor materials and interfacesPhysics and Chemistry of Solid State2024Цитирований: 5
    ABI

  19. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    СтатьяSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering2025Цитирований: 4
    ABI

  20. Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    СтатьяMetal and Thin Film MechanicsJournal of Porous Materials2024Цитирований: 4
    ABI

  21. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    СтатьяChalcogenide Semiconductor Thin FilmsOptical Materials X2024Цитирований: 4
    ABI

  22. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  23. Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals

    F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

    СтатьяSolid-state spectroscopy and crystallographyMaterials Research Innovations2024Цитирований: 3
    ABI

  24. Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition

    Turapov I. Kh., I. R. Bekpulatov, A. Q. Tashatov +1

    СтатьяIon-surface interactions and analysisПисьма в журнал технической физики2022Цитирований: 3
    ABI

  25. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    СтатьяTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters2024Цитирований: 2
    ABI