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Phase-change materials and chalcogenides

Работ: 129

  1. Origin of the electrical activity of iron atoms in vitreous arsenic selenide

    А. В. Марченко, T. Yu. Rabchanova, П. П. Серегин +2

    СтатьяPhase-change materials and chalcogenidesGlass Physics and Chemistry2016Цитирований: 1
    ABI

  2. The effect of cycle deformation on the AC conductivity of (Bi0.3Sb0.7)2Te3 films

    Kh. M. Sulaimonov

    СтатьяPhase-change materials and chalcogenidesTechnical Physics2017Цитирований: 1
    ABI

  3. Effect of the Sb/Se Ratio on the Structural and Electrical Properties of SbxSey Films

    М. С. Тиванов, T. M. Razykov, К. M. Kuchkarov +4

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2023Цитирований: 1
    ABI

  4. Effect of substrate temperature on the microstructural and optical properties of chemical molecular beam deposited sb2s3 films

    T. M. Razykov, К. M. Kuchkarov, М. С. Тиванов +12

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Materials Science Materials in Electronics2024Цитирований: 1
    ABI

  5. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

    Mukaddas Arzikulova

    СтатьяThermal properties of materialsMathematical Modelling and Applications2024Цитирований: 1
    ABI

  6. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2025Цитирований: 1
    ABI

  7. Study of the Influence of Temperature on the Transitions of the CdS/Si/CdTe Heterosystem

    F. A. Giyasova, Khayot Bakhronov, Murodjon A. Yuldoshev +6

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 1
    ABI

  8. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics2021Цитирований: 1
    ABI

  9. Impurity tin atoms in glassy As x S1 − x and As x Se1 − x

    G. A. Bordovsky, А. В. Марченко, П. П. Серегин +1

    СтатьяPhase-change materials and chalcogenidesInorganic Materials2014Цитирований: 1
    ABI

  10. Theoretical analysis of the off-axis Z-scan method for measuring nonlinear refractive indices

    A. I. Ryasnyanskiı̆

    СтатьяNonlinear Optical Materials StudiesOptics and Spectroscopy2006Цитирований: 1
    ABI

  11. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

    R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

    СтатьяPhase-change materials and chalcogenidesMaterials science forum2000Цитирований: 1
    ABI

  12. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions

    Yurii R. Nosov

    ГлаваSemiconductor Quantum Structures and Devices1969Цитирований: 0
    ABI

  13. Study on radiative defects ind by reactor irradiation in Te semiconductor compounds

    Yunusov, П. П. Серегин, A. Kamolov

    СтатьяAdvanced Semiconductor Detectors and Materials1976Цитирований: 0
    ABI

  14. Inelastic relaxation in Pb1−<i>x</i>Sn<i>x</i>Te solid solutions

    Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Kharionovskii

    СтатьяOptical and Acousto-Optic TechnologiesSoviet Journal of Low Temperature Physics1977Цитирований: 0
    ABI

  15. Diamagnetic resonance in Pb1–<i>x</i>Sn<i>x</i>Te

    Yu. A. Bratashevskii, V. D. Prozorovskiı̆, Yu. S. Khaionovskii

    СтатьяSolid-state spectroscopy and crystallographySoviet Journal of Low Temperature Physics1977Цитирований: 0
    ABI

  16. Investigation of peculiarities in the temperature dependence of the thermal conductivity of Pbl2 and ln4Se3 layer crystals at low temperatures

    E. Anders, I. V. Volchok, B. Ya. Sukharevskiǐ

    СтатьяThermography and Photoacoustic TechniquesSoviet Journal of Low Temperature Physics1978Цитирований: 0
    ABI

  17. Temperature dependence of the electrical resistance of amorphous bismuth films

    Yu. F. Komnik, Б. И. Белевцев

    СтатьяThermodynamic and Structural Properties of Metals and AlloysSoviet Journal of Low Temperature Physics1980Цитирований: 0
    ABI

  18. Dielectric properties of thin films of chalcogenide glasses

    V. M. Kalygina, V. I. Gaman, A. I. Badluev

    СтатьяPhase-change materials and chalcogenidesRussian Physics Journal1980Цитирований: 0
    ABI

  19. Ion doping of gallium arsenide

    П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

    СтатьяPhase-change materials and chalcogenidesRussian Physics Journal1980Цитирований: 0
    ABI

  20. Temperature dependence of spin–lattice relaxation probabilities in the excited triplet state of crystalline benzil

    A. A. Avdeenko, V. А. Karachevtsev, Yu. V. Naboĭkin +1

    СтатьяPhotochemistry and Electron Transfer StudiesSoviet Journal of Low Temperature Physics1980Цитирований: 0
    ABI

  21. Electrical properties (dc and ac) of vanadium-borate glass

    V. M. Kalygina, В. И. Косинцев, V. I. Gaman +3

    СтатьяGlass properties and applicationsRussian Physics Journal1981Цитирований: 0
    ABI

  22. Low-temperature thermal conductivity of uniaxially compressed ln4Se3 layered crystals

    E. Anders, I. V. Volchok

    СтатьяChalcogenide Semiconductor Thin FilmsSoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI

  23. Two‐Photon Interband Absorption in Qunntized Semiconductor Films with Participation of Deep Impurity Centers

    В. Д. Кревчик, A.Ya. Yafasov

    СтатьяNonlinear Optical Materials Studiesphysica status solidi (b)1982Цитирований: 0
    ABI

  24. Range and spatial distribution of ion-implanted impurities in glasses

    A.A. Deshkovskaya, A. F. Burenkov, Ф. Ф. Комаров

    СтатьяGlass properties and applicationsRadiation Effects1983Цитирований: 0
    ABI

  25. The Localization Energy of Wannier‐Mott Excitons at the Interface

    I. M. Nepomnyashi, V. N. Nishanov

    СтатьяNonlinear Dynamics and Pattern Formationphysica status solidi (b)1984Цитирований: 0
    ABI