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Работы, цитирующие эту работу

Работ: 7

Работа: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  2. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2018Цитирований: 2
    ABI

  3. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  4. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1
    ABI

  5. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  6. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI

  7. Features of Growing a Solid Solution Si1−xGex (0 &lt; x &lt; 1) from a Liquid Phase

    Jamoliddin Razzokov

    ГлаваSilicon and Solar Cell TechnologiesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0
    ABI