Работы, на которые ссылается эта работа

Работ: 7

Работа: Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15

   ABIABI:AkademIndex/openalex/2026.other.213638

2. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12

   ABIABI:AkademIndex/openalex/2017.article.000091

3. Без названия

   ДругоеЦитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.545705

4. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   СтатьяSemiconductor materials and interfacesNanotechnologies in Russia2016Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.079735

5. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199258

6. Electron beam probe studies of semiconductor-insulator interfaces

   W. R. Bottoms, D.C. Guterman

   Статья1974Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.630500

7. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.710229