Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseскороОткрытый API экосистемы
Латиница
Русский
← Назад к работе

Работы, на которые ссылается эта работа

Работ: 15

Работа: Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  3. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  4. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  5. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  6. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8
    ABI

  7. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    СтатьяLaser Material Processing TechniquesTechnical Physics2019Цитирований: 5
    ABI

  8. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4
    ABI

  9. Fabrication of Iron Pyrite Thin Films and Photovoltaic Devices by Sulfurization in Electrodeposition Method

    Zheng Lu, Hu Zhou, Chao Ye +5

    СтатьяMetal Extraction and BioleachingNanomaterials2021Цитирований: 3
    ABI

  10. Electronic structure of silicon dioxide (a review)

    S. S. Nekrashevich, V. A. Gritsenko

    Статья2014Цитирований: 3
    ABI

  11. General Relationship for the Thermal Oxidation of Silicon

    B. E. Deal, Andrew S. Grove

    Статья1965Цитирований: 3
    ABI

  12. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

    M.T. Normuradov, A. K. Tashatov, А.С. Рысбаев +4

    Статья2007Цитирований: 2
    ABI

  13. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 2
    ABI

  14. Без названия

    ДругоеЦитирований: 1
    ABI

  15. Без названия

    ДругоеЦитирований: 1
    ABI