Работы, на которые ссылается эта работа

Работ: 36

Работа: Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
ABI
OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES
Jo`shqin Abdullayev, I. B. Sapaev
Статья2024Цитирований: 13
ABI
Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors
Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3
Статья2012Цитирований: 11
ABI
An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs
Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1
Статья2016Цитирований: 11
ABI
Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
ABI
GaN nanowire ultraviolet photodetector with a graphene transparent contact
A. V. Babichev, H. Zhang, Pierre Lavenus +5
Статья2013Цитирований: 10
ABI
Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays
Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji
Статья2019Цитирований: 10
ABI
Influence of the parameters to transition capacitance at NCDS-PSI heterostructure
I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5
СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial p-n junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
ABI
Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11
Статья2011Цитирований: 9
ABI
Improvement of carrier ballisticity in junctionless nanowire transistors
Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2
Статья2011Цитирований: 9
ABI
A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun
Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8
Статья2015Цитирований: 9
ABI
Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
ABI
Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Jo`shqin Abdullayev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
ABI
Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions
Zahra Arefinia, Asghar Asgari
Статья2015Цитирований: 7
ABI
Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6
ABI
High efficiency silicon solar cell based on asymmetric nanowire
Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2
Статья2015Цитирований: 6
ABI
Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET
Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen
Статья2019Цитирований: 6
ABI
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1
Статья2021Цитирований: 6
ABI
ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE
Olzat Toktarbaiuly
Статья2024Цитирований: 6
ABI
Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
ABI
The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
ABI
Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene
Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi
Статья2014Цитирований: 4
ABI
Photoluminescence andI-Vcharacteristics of a CdS-nanoparticles-porous-silicon heterojunction
Neelima Deshmukh, Tejashree Bhave, Anita Sagadevan Ethiraj +4
Статья2001Цитирований: 4
ABI
Optoelectronic characterization of ZnS/PS systems
王彩凤 Caifeng Wang, 李清山 Qingshan Li, 胡波 Bo Hu
Статья2009Цитирований: 3
ABI

Работы, на которые ссылается эта работа

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

GaN nanowire ultraviolet photodetector with a graphene transparent contact

Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Improvement of carrier ballisticity in junctionless nanowire transistors

A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

High efficiency silicon solar cell based on asymmetric nanowire

Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

Optoelectronic characterization of ZnS/PS systems