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Работы, на которые ссылается эта работа

Работ: 24

Работа: Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
    ABI

  2. Modeling Temperature Dependence of The Combined Density of States in Heterostructures with Quantum Wells Under the Influence of a Quantizing Magnetic Field

    У. И. Эркабоев, Sherzodjon A. Ruzaliev, R. G. Rakhimov +1

    Статья2024Цитирований: 8
    ABI

  3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6
    ABI

  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials2001Цитирований: 5
    ABI

  5. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Статья2018Цитирований: 5
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4
    ABI

  7. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4
    ABI

  8. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Статья2011Цитирований: 4
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  10. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Статья2010Цитирований: 3
    ABI

  11. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Статья2013Цитирований: 3
    ABI

  12. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Статья2009Цитирований: 3
    ABI

  13. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Статья2018Цитирований: 3
    ABI

  14. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  15. Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

    М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, S. R. Boydedayev +1

    СтатьяGraphene research and applicationsEast European Journal of Physics2024Цитирований: 2
    ABI

  16. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2
    ABI

  17. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  18. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

    Asen Asenov, R. Balasubramaniam, A. R. Brown +1

    Статья2003Цитирований: 2
    ABI

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    ДругоеЦитирований: 1
    ABI

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    ДругоеЦитирований: 1
    ABI

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    ДругоеЦитирований: 1
    ABI

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    ДругоеЦитирований: 1
    ABI

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    ДругоеЦитирований: 1
    ABI

  24. Без названия

    ДругоеЦитирований: 1
    ABI