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Работы, на которые ссылается эта работа

Работ: 40

Работа: Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 14
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Статья2024Цитирований: 13
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Статья2012Цитирований: 11
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Статья2016Цитирований: 11
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Статья2013Цитирований: 10
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Статья2019Цитирований: 10
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  10. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  11. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Статья2011Цитирований: 9
    ABI

  12. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Статья2011Цитирований: 9
    ABI

  13. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Статья2015Цитирований: 9
    ABI

  14. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  15. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  16. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Статья2015Цитирований: 7
    ABI

  17. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6
    ABI

  18. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Статья2015Цитирований: 6
    ABI

  19. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Статья2019Цитирований: 6
    ABI

  20. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Статья2021Цитирований: 6
    ABI

  21. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Статья2024Цитирований: 6
    ABI

  22. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  23. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  24. Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

    Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi

    Статья2014Цитирований: 4
    ABI

  25. Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

    Neelima Deshmukh, Tejashree Bhave, Anita Sagadevan Ethiraj +4

    Статья2001Цитирований: 4
    ABI