Работы, цитирующие эту работу

Работ: 7

Работа: Electron microscopy characterization of higher manganese silicide film structure on silicon

1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

   I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

   СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22

   ABIABI:AkademIndex/openalex/2022.article.000132

2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21

   ABIABI:AkademIndex/openalex/2026.other.079743

3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

   M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17

   ABIABI:AkademIndex/openalex/2021.article.000283

4. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

   СтатьяSemiconductor materials and interfacesSemiconductors2017Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.199258

5. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

   А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.001910

6. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

   А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.297468

7. Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

   I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.009630