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Работы, цитирующие эту работу

Работ: 10

Работа: Self-organization of nickel atoms in silicon

  1. Silicon Photovoltaic Cells with Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2020Цитирований: 15
    ABI

  2. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2019Цитирований: 12
    ABI

  3. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 9
    ABI

  4. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics2018Цитирований: 9
    ABI

  5. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7
    ABI

  6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
    ABI

  7. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 4
    ABI

  8. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  9. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  10. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0
    ABI