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Работы, цитирующие эту работу

Работ: 58

Работа: Physics of Semiconductor Devices

  1. The fill factor of load current-voltage performance of solar cells and its role for determining their temperature properties

    Р. Алиев, M. A. Alinazarova, Р. Г. Икрамов +1

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 0
    ABI

  2. A semiempirical equation for temperature dependences of photoelectric parameters of a-Si: H solar cells

    Р. Алиев, Р. Г. Икрамов, O. T. Ismanova +1

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 0
    ABI

  3. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

    P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

    СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0
    ABI

  4. Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

    O. A. Abdulkhaev, G. O. Asanova, D. M. Yodgorova +1

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2012Цитирований: 0
    ABI

  5. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2013Цитирований: 0
    ABI

  6. Impact of concentrated solar radiation on a GaAs/AlGaAs Heterojunction Photo Converter with a limited absorption layer

    M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов

    Статьяsolar cell performance optimizationApplied Solar Energy2015Цитирований: 0
    ABI

  7. Change in characteristics of the band structure of oxide materials at high temperatures

    I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

    СтатьяSemiconductor materials and devicesHigh Temperature2016Цитирований: 0
    ABI

  8. On mechanism of radiative sensitivity of power diode direct voltage drop

    A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3

    СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2017Цитирований: 0
    ABI