Работы, цитирующие эту работу

Работ: 58

Работа: Physics of Semiconductor Devices

Thermal Stimulation of Photocurrent in p–n Junctions
G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев
СтатьяSemiconductor materials and interfacesApplied Solar Energy2018Цитирований: 2
ABI
The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures
L. O. Olimov, B. M. Abdurakhmanov
СтатьяSemiconductor materials and interfacesAdvances in Energy and Power2013Цитирований: 2
ABI
Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev
СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2
ABI
Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions
T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1
СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 2
ABI
Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals
N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1
СтатьяIndustrial Engineering and TechnologiesTechnical Physics Letters2008Цитирований: 1
ABI
Calculation of resonance frequencies of electrons present in the contact area of two semiconductors
Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov
СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2011Цитирований: 1
ABI
Investigation of the heat transfer processes under the action of pulse power
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2012Цитирований: 1
ABI
Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review
R. R. Kabulov
Обзорная статьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2020Цитирований: 1
ABI
Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions
А. Yusupov, К. Адамбаев, Zafar Turaev +2
СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2017Цитирований: 1
ABI
The fabrication and investigation of n/CdS-p/CdTe-n/Si structures
I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2011Цитирований: 1
ABI
Surface state density at the semiconductor-glass interface
Aslan Nasirov
СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
ABI
Peculiarities of solar elements based on narrow-band-gap semiconductors
М. С. Саидов
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2011Цитирований: 1
ABI
Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures
A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev
ГлаваSemiconductor materials and interfacesInTech eBooks2011Цитирований: 1
ABI
Energy levels and heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by some compounds of the II–V and II–VI types
М. С. Саидов
СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2010Цитирований: 1
ABI
Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions
T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1
СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1
ABI
Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers
I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1
СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0
ABI
Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution
N. A. Matchanov
СтатьяSemiconductor materials and interfacesTechnical Physics2008Цитирований: 0
ABI
Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region
A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0
ABI
Effect of γ-ray irradiation on large-block cadmium telluride structures
S. A. Muzafarova, A. A. Usarov
СтатьяAdvanced Semiconductor Detectors and MaterialsAtomic Energy2008Цитирований: 0
ABI
Photocurrent amplification effect of the fet gate p–n junction
D. M. Edgorova
СтатьяPhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics2009Цитирований: 0
ABI
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2
СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0
ABI
White radiation upon breakdown of an nSi— pCdiamond heterojunction and upon limiting efficiency of a silicon solar element
Timur Saliev, М. С. Саидов
СтатьяDiamond and Carbon-based Materials ResearchApplied Solar Energy2010Цитирований: 0
ABI
Effect of Be codoping on the photoluminescence spectra of GaMnAs
Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3
СтатьяZnO doping and propertiesCurrent Applied Physics2010Цитирований: 0
ABI
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2
СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0
ABI
Relaxation process features of photoconductivity in p-i-n structures
R. A. Mumimov
СтатьяThin-Film Transistor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2010Цитирований: 0
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