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Работы, цитирующие эту работу

Работ: 13

Работа: OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

  1. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  3. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  4. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
    ABI

  5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
    ABI

  7. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
    ABI

  8. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2
    ABI

  9. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

    S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

    СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2
    ABI

  10. Temperature Response Curve of Silicon Diode Temperature Sensors

    Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

    СтатьяAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  11. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  12. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  13. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
    ABI