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Работы, на которые ссылается эта работа

Работ: 22

Работа: Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  4. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  6. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  7. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  8. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    СтатьяSurface Roughness and Optical MeasurementsIntegrated ferroelectrics2024Цитирований: 12
    ABI

  9. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9
    ABI

  10. Modeling defect formation in nano-ZrO<sub>2</sub> under He and H+ irradiation

    Gunel Imanova

    Статья2024Цитирований: 9
    ABI

  11. Gamma radiation mediated catalytic process for hydrogen generation by water decomposition on NaNO3 surface

    Gunel Imanova, S. H. Jabarov, T.N. Agayev +4

    СтатьяAmmonia Synthesis and Nitrogen ReductionJournal of Porous Materials2024Цитирований: 7
    ABI

  12. Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    СтатьяMetal and Thin Film MechanicsJournal of Porous Materials2024Цитирований: 4
    ABI

  13. Dielectric and electrical properties of La0.5Ba0.5MnO3 and La0.97Ba0.03MnO3 perovskites

    S. H. Jabarov, A. Kh. Nabiyeva, Elchin M. Huseynov +3

    Статья2024Цитирований: 4
    ABI

  14. Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals

    F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

    СтатьяSolid-state spectroscopy and crystallographyMaterials Research Innovations2024Цитирований: 3
    ABI

  15. Silicide thin films and their applications in microelectronics

    S. P. Murarka

    Статья1995Цитирований: 3
    ABI

  16. Formation of ultrathin magnetic cobalt films on the Si(111)7 × 7 surface

    M. V. Gomoyunova, G. S. Grebenyuk, I. I. Pronin

    Статья2011Цитирований: 2
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI