Работы, цитирующие эту работу

Работ: 8

Работа: Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528

2. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.410284

3. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.000971

4. Study of the Mobility and Electrical Conductivity of Chromium Silicide

   M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 3

   ABIABI:AkademIndex/openalex/2023.article.001424

5. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   СтатьяAdvanced Materials Characterization TechniquesAdvanced Physical Research2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001560

6. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   СтатьяGas Sensing Nanomaterials and SensorsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002166

7. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.585531

8. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003369