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Работы, цитирующие эту работу

Работ: 8

Работа: Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

  1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications2010Цитирований: 5
    ABI

  2. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 4
    ABI

  3. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4
    ABI

  4. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
    ABI

  5. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics2020Цитирований: 1
    ABI

  6. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  7. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI

  8. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy2025Цитирований: 0
    ABI