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25 та иш

Иш: Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

  1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20238 иқтибос
    ABI

  3. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос
    ABI

  4. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Мақола20237 иқтибос
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 иқтибос
    ABI

  7. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 иқтибос
    ABI

  8. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Мақола20175 иқтибос
    ABI

  9. Gettering properties of nickel in silicon photocells

    Bakhadirkhanov M.K., Z. T. Kenzhaev, Turekeev Kh. S. +2

    МақолаSemiconductor materials and interfacesЖурнал технической физики20224 иқтибос
    ABI

  10. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 иқтибос
    ABI

  11. Effect of nickel doping on the spectral sensitivity of silicon solar cells

    Nurillo Zikrillayev, Z. T. Kenzhaev, Timur Ismailov +2

    МақолаSilicon and Solar Cell TechnologiesE3S Web of Conferences20234 иқтибос
    ABI

  12. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос
    ABI

  13. Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application

    Jing Liu, Shuaipeng Yue

    Мақола20223 иқтибос
    ABI

  14. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 иқтибос
    ABI

  15. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    МақолаSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 иқтибос
    ABI

  16. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  17. III–V compound materials and lasers on silicon

    Wenyu Yang, Yajie Li, Fangyuan Meng +6

    Мақола20192 иқтибос
    ABI

  18. Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array

    Hai Xu, He Shun Jia, Zhi Tao Yao +1

    Мақола20082 иқтибос
    ABI

  19. ZnS thin film deposition on Silicon and glass substrates by Thermionic vacuum Arc

    Mehmet Özkan, N. Ekem, Şuat Pat +1

    Мақола20112 иқтибос
    ABI

  20. Handbook Series on Semiconductor Parameters

    Китоб19962 иқтибос
    ABI

  21. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20231 иқтибос
    ABI

  22. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 иқтибос
    ABI

  23. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    МақолаMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 иқтибос
    ABI

  24. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 иқтибос
    ABI

  25. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI