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21 та иш

Иш: The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    МақолаSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 иқтибос
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesModern Physics Letters B202317 иқтибос
    ABI

  3. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 иқтибос
    ABI

  4. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    МақолаAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations20249 иқтибос
    ABI

  5. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос
    ABI

  6. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    МақолаSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 иқтибос
    ABI

  7. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 иқтибос
    ABI

  8. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    МақолаSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 иқтибос
    ABI

  9. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  10. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    МақолаChalcogenide Semiconductor Thin FilmsOptical Materials X20244 иқтибос
    ABI

  11. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    МақолаSemiconductor materials and interfacesMaterials Research Innovations20243 иқтибос
    ABI

  12. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    МақолаSurface and Thin Film PhenomenaOptical Materials X20242 иқтибос
    ABI

  13. Obtaining manganese silicide films on a silicon substrate by the diffusion method

    N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20222 иқтибос
    ABI

  14. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    МақолаSemiconductor materials and devicesAIP conference proceedings20241 иқтибос
    ABI

  15. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

    Y. S. Ergashov, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 иқтибос
    ABI

  16. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос
    ABI

  17. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI

  18. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    МақолаSemiconductor materials and interfacesCrystallography Reports20240 иқтибос
    ABI

  19. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    МақолаSemiconductor materials and interfacesКристаллография20240 иқтибос
    ABI

  20. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    МақолаZnO doping and propertiesOptics Communications20250 иқтибос
    ABI

  21. Study of polymer coatings implanted with high-energy ion beams

    B.D. Igamov, A.I. Kamardin, I.Yu Kochemasov +4

    МақолаPolymer Nanocomposite Synthesis and IrradiationNext Materials20260 иқтибос
    ABI