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Ушбу иш иқтибос қилган ишлар

19 та иш

Иш: Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

  1. Сарлавҳасиз

    Бошқа1117 иқтибос
    ABI

  2. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 иқтибос
    ABI

  3. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  4. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос
    ABI

  5. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибос
    ABI

  6. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  7. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    МақолаMetal and Thin Film MechanicsTechnical Physics201315 иқтибос
    ABI

  8. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    МақолаMetal and Thin Film MechanicsTechnical Physics201513 иқтибос
    ABI

  9. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    МақолаSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа13 иқтибос
    ABI

  11. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  12. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос
    ABI

  13. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    МақолаSemiconductor materials and interfacesTechnical Physics20194 иқтибос
    ABI

  14. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    МақолаSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20113 иқтибос
    ABI

  15. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 иқтибос
    ABI

  16. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 иқтибос
    ABI

  17. Optical and structural properties of β-FeSi2 precipitate layers in silicon

    Bernd Schuller, R. Carius, S. Mantl

    Мақола20032 иқтибос
    ABI

  18. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 иқтибос
    ABI

  19. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI