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Materials science forum

86 ta ish

Kitob turkumi · ISSN 0255-5476

  1. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19970 iqtibos
    ABI

  2. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    MaqolaSilicon Nanostructures and PhotoluminescenceMaterials science forum19970 iqtibos
    ABI

  3. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

    Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  4. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  5. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  6. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
    ABI

  7. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    MaqolaThin-Film Transistor TechnologiesMaterials science forum19980 iqtibos
    ABI

  8. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    MaqolaLaser-Matter Interactions and ApplicationsMaterials science forum19980 iqtibos
    ABI

  9. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

    Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis +3

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  10. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  11. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  12. Growth of SiC and GaN on Porous Buffer Layers

    M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
    ABI

  13. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 iqtibos
    ABI

  14. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos
    ABI

  15. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

    Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos
    ABI

  16. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos
    ABI

  17. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

    Michael E. Mastro, O. Kryliouk, Todd Dann +4

    MaqolaGaN-based semiconductor devices and materialsMaterials science forum20020 iqtibos
    ABI

  18. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  19. SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

    G. Bertuccio, R. Casiraghi, E. Gatti +5

    MaqolaParticle Detector Development and PerformanceMaterials science forum20030 iqtibos
    ABI

  20. Modelling the Formation of Nano-Sized SiC on Si

    K. L. Safonov, Alexander Schmidt, D. V. Kulikov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  21. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  22. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

    L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  23. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

    G. Sarov, Roumen Kakanakov, T. Cholakova +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI

  24. Porous SiC: New Applications through In- and Out- Dopant Diffusion

    M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

    MaqolaSemiconductor materials and devicesMaterials science forum20030 iqtibos
    ABI

  25. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos
    ABI