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Integrated Circuits and Semiconductor Failure Analysis

142 ta ish

  1. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos
    ABI

  2. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    MaqolaSemiconductor materials and devices20220 iqtibos
    ABI

  3. Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

    Б.Г. Атабаев, R. Dzabbarganov, F. R. Yuzikaeva +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 iqtibos
    ABI

  4. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

    S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

    MaqolaIon-surface interactions and analysisCoatings20240 iqtibos
    ABI

  5. SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

    L. Torrisi, A. Torrisi, M. Cutroneo

    MaqolaSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids20240 iqtibos
    ABI

  6. POLARIZATION DEPENDENCE OF SINGLE-PHOTON INTERBAND LINEAR CIRCULAR DICROISM IN A3B5 SEMICONDUCTORS

    Rasulov Rustam Yavkachovich, Isomiddinova Umida Mamurjonova, Kasimov Forrukh Kasimovich +1

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisAustrian Journal of Technical and Natural Sciences20240 iqtibos
    ABI

  7. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  8. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  9. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  10. Spectral physical unclonable functions: downscaling randomness with multi-resonant hybrid particles

    Martin Sandomirskii, Е. А. Петрова, Pavel Kustov +7

    MaqolaPhysical Unclonable Functions (PUFs) and Hardware SecurityNature Communications20250 iqtibos
    ABI

  11. Atomic-Scale Simulations of Chemical Damage in Neoprene under Noble Gas Ion Irradiation

    Jiemin Luo, Meng Ren, Qiang Liu +4

    MaqolaIon-surface interactions and analysisThe Journal of Physical Chemistry B20250 iqtibos
    ABI

  12. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesJournal of Computational Electronics20250 iqtibos
    ABI

  13. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI

  14. On the Theory of the Intraband Mechanism of Single-Photon Absorption in Semiconductors, Taking into Account the Effect of Coherent Saturation

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Forrukh U. Kasimov +2

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20250 iqtibos
    ABI

  15. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI

  16. A Versatile Strategy for Comprehensive Data Collection and Retention in Embedded SoC Memories

    Paolo Bernardi, Giorgio Insinga, M. Battilana +7

    MaqolaVLSI and Analog Circuit TestingACM Transactions on Embedded Computing Systems20250 iqtibos
    ABI

  17. Quality control of outsole products using SPC and FTA methods

    S. Sunariyah, Wiwik Sulistyowati, Atikha Sidhi Cahyana +2

    MaqolaReliability and Maintenance OptimizationAIP conference proceedings20260 iqtibos
    ABI