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Integrated Circuits and Semiconductor Failure Analysis

142 ta ish

  1. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20163 iqtibos
    ABI

  2. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos
    ABI

  3. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    MaqolaSemiconductor materials and devicesApplied Sciences20203 iqtibos
    ABI

  4. Calibration of machine platform nonlinearity in Instrumented Indentation Test in the macro range

    Jasurkhuja Kholkhujaev, Giacomo Maculotti, Gianfranco Genta +1

    MaqolaMetal and Thin Film MechanicsPrecision Engineering20233 iqtibos
    ABI

  5. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

    T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19973 iqtibos
    ABI

  6. Features of the temperature properties of a field-effect transistor in a current-limiting mode

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20133 iqtibos
    ABI

  7. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    MaqolaSemiconductor materials and devicesResults in Physics20183 iqtibos
    ABI

  8. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    MaqolaSemiconductor materials and devicesTechnical Physics20193 iqtibos
    ABI

  9. Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

    С. Н. Морозов

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20122 iqtibos
    ABI

  10. Indium sputtering upon bombardment with cluster ions

    С. Н. Морозов, У. Х. Расулев

    MaqolaIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics20122 iqtibos
    ABI

  11. On the unimolecular decay and mechanism of formation of Si+ n cluster ions

    Н. Х. Джемилев, С. Ф. Коваленко, С. Е. Максимов +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20152 iqtibos
    ABI

  12. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos
    ABI

  13. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20222 iqtibos
    ABI

  14. Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

    A. M. Sultanov, E. K. Yusupov, R. G. Rakhimov

    MaqolaPulsed Power Technology ApplicationsJournal of Nano- and Electronic Physics20242 iqtibos
    ABI

  15. Design, synthesis and pharmacological evaluation of new PARP1 inhibitors by merging pharmacophores of olaparib and the natural product alantolactone

    Muzaffar Kayumov, Jia Li, Azizbek Pardaev +9

    MaqolaPARP inhibition in cancer therapyEuropean Journal of Medicinal Chemistry20222 iqtibos
    ABI

  16. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    MaqolaIon-surface interactions and analysisTechnical Physics Letters20012 iqtibos
    ABI

  17. Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

    A. M. Rasulov, A.A. Dzhurakhalov

    MaqolaIon-surface interactions and analysisComputational Materials Science20052 iqtibos
    ABI

  18. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    MaqolaIon-surface interactions and analysisEurasian journal of physics and functional materials20232 iqtibos
    ABI

  19. Model and Methods for Detecting Undetected Errors Using a Signature Analyzer

    Jo’shqin Baltayev, Sunnatillo Boltayev

    BobVLSI and Analog Circuit TestingLecture notes in networks and systems20222 iqtibos
    ABI

  20. Ion-photon emission from metals implanted with ions of reactive elements

    S.F. Belykh, R.N. Evtukhov, I.V. Redina +1

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19952 iqtibos
    ABI

  21. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    MaqolaSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos
    ABI

  22. Subthreshold irradiation effects in silicon epitaxial films

    M. A. Zaikovskaya, Arnold Kiv, O. R. Niyazova

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19702 iqtibos
    ABI

  23. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  24. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19721 iqtibos
    ABI

  25. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

    T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

    MaqolaIon-surface interactions and analysisRadiation Effects19871 iqtibos
    ABI