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Integrated Circuits and Semiconductor Failure Analysis

142 ta ish

  1. The emission of atomic and molecular ions under single and multiple-charged rare gas ion bombardment of LiF, KCl, SiC

    Б.Г. Атабаев, Sh.S. Radjabov, M.Kh. Akhmadzhanova

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19951 iqtibos
    ABI

  2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 iqtibos
    ABI

  3. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

    Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20031 iqtibos
    ABI

  4. Ion Beams in Nanoscience and Technology

    Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang

    KitobIon-surface interactions and analysisParticle acceleration and detection20091 iqtibos
    ABI

  5. Calculation of resonance frequencies of electrons present in the contact area of two semiconductors

    Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov

    MaqolaSemiconductor materials and interfacesRadioelectronics and Communications Systems20111 iqtibos
    ABI

  6. Cluster projectile ions used for the SIMS analysis of silicon

    Sh.Dj. Akhunov, С. Н. Морозов

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20131 iqtibos
    ABI

  7. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    MaqolaIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology20181 iqtibos
    ABI

  8. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 iqtibos
    ABI

  9. Sputtering of GaAs target under Bi+ cluster ions bombardment

    Sh.Dj. Akhunov, G.P. Kakhramonova, Sh.M. Axmedov +2

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20221 iqtibos
    ABI

  10. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  11. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos
    ABI

  12. Investigation of the transparent dielectric defect structure using the emission of multiply charged ions

    R. Abdupataev, M.R. Bendilov, Kh.B. Bejsembaeva +1

    MaqolaIntegrated Circuits and Semiconductor Failure Analysis19861 iqtibos
    ABI

  13. Baric Impurity Effects in Silicon

    Victor I. Fistul, Alisher Baxadirov, С. З. Зайнабидинов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19931 iqtibos
    ABI

  14. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

    S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

    MaqolaSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19971 iqtibos
    ABI

  15. Structure modifications and mechanical properties of alloys exposed to pulsed ion beams

    A.D. Pogrebnjak, A. E. Ligachev, A. V. Nesmelov +6

    MaqolaIon-surface interactions and analysisRadiation Effects19871 iqtibos
    ABI

  16. Performance Characteristics of Fiber Optical Lines and Diagnostic Techniques for Optical Fiber Cable

    Abdulaziz Nazarov, Bobir Ochilov, Mirkomil Khasanov

    MaqolaIntegrated Circuits and Semiconductor Failure Analysis2021 International Conference on Information Science and Communications Technologies (ICISCT)20211 iqtibos
    ABI

  17. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    MaqolaSemiconductor materials and interfacesE3S Web of Conferences20211 iqtibos
    ABI

  18. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    MaqolaSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 iqtibos
    ABI

  19. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

    D. A. Aronov, R. Mamatkulov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19730 iqtibos
    ABI

  20. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19750 iqtibos
    ABI

  21. Influence of X-irradiation on silicon Schottky diodes

    U.A. Shakirov, Marat S. Yunusov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19760 iqtibos
    ABI

  22. Effect of <i>B</i>-subgroup elements on residual electric resistivity of bivalent metals

    Β. N. Aleksandrov, V. V. Dukin

    MaqolaElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics19760 iqtibos
    ABI

  23. Parameters of silicon microdiodes fabricated by selective epitaxy

    M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

    MaqolaSilicon and Solar Cell TechnologiesThin Solid Films19760 iqtibos
    ABI

  24. Transverse electron focusing at high emitter currents

    Yu. A. Kolesnichenko

    MaqolaElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics19800 iqtibos
    ABI

  25. Transverse focusing of electrons in the presence of plane defects terminating at the specimen surface

    S. A. Korzh

    MaqolaElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics19810 iqtibos
    ABI