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13 ta ish

Ish: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 iqtibos
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos
    ABI

  3. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    MaqolaSemiconductor materials and interfacesE3S Web of Conferences20239 iqtibos
    ABI

  4. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    MaqolaPhotocathodes and Microchannel PlatesTechnical Physics20198 iqtibos
    ABI

  5. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    MaqolaSemiconductor materials and devicesTechnical Physics20177 iqtibos
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    MaqolaNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 iqtibos
    ABI

  7. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20202 iqtibos
    ABI

  8. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    MaqolaTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 iqtibos
    ABI

  9. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    MaqolaIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 iqtibos
    ABI

  10. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO<sub>2</sub>(001)&lt;110&gt; at Glancing Incidence

    Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun Kutliev +1

    MaqolaIon-surface interactions and analysis20240 iqtibos
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  12. Study of regularities of formation of thin three-component CdMgTe films on CdTe(111) surface upon implantation of Mg ions and subsequent annealing

    Д. А. Ташмухамедова, A. A. Abduvayitov, X. X. Boltaev +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings20250 iqtibos
    ABI

  13. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    MaqolaSemiconductor materials and interfacesMaterials Today Communications20260 iqtibos
    ABI