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Работы, цитирующие эту работу

Работ: 13

Работа: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  3. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  4. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8
    ABI

  5. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    СтатьяSemiconductor materials and devicesTechnical Physics2017Цитирований: 7
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3
    ABI

  7. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  8. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  9. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science2020Цитирований: 1
    ABI

  10. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO<sub>2</sub>(001)&lt;110&gt; at Glancing Incidence

    Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun Kutliev +1

    СтатьяIon-surface interactions and analysis2024Цитирований: 0
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  12. Study of regularities of formation of thin three-component CdMgTe films on CdTe(111) surface upon implantation of Mg ions and subsequent annealing

    Д. А. Ташмухамедова, A. A. Abduvayitov, X. X. Boltaev +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings2025Цитирований: 0
    ABI

  13. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0
    ABI