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Semiconductors

118 works

Journal · ISSN 1063-7826

  1. Energy parameters of two-electron tin centers in PbSe

    С. А. Немов, F. S. Nasredinov, P. P. Seregin +2

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20051 citations
    ABI

  2. Statistics of electrons in PbS with U centers

    С. А. Немов, Ф. С. Насрединов, П. П. Серегин +2

    ArticleSolid-state spectroscopy and crystallographySemiconductors20051 citations
    ABI

  3. New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters

    С. Е. Никитин, A. V. Bobyl, N. R. Avezova +1

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20181 citations
    ABI

  4. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

    Б. Сапаев, A. S. Saidov

    ArticleSemiconductor materials and interfacesSemiconductors20051 citations
    ABI

  5. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    ArticleSemiconductor materials and interfacesSemiconductors20001 citations
    ABI

  6. Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures

    Р. Алиев

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors19971 citations
    ABI

  7. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  8. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesSemiconductors20151 citations
    ABI

  9. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20151 citations
    ABI

  10. Mechanisms of anomalous photovoltage Effect in CdTe films

    G. A. Nabiev

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20091 citations
    ABI

  11. Drift mobility of carriers in porous silicon

    N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20011 citations
    ABI

  12. Polarization-Spectral Dependences of the Three-Photon Interband Absorption of Light and Linear-Circular Dichroism in Semiconductors with Cubic Symmetry

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, I. Éshboltaev +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20221 citations
    ABI

  13. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

    V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

    ArticleLaser Design and ApplicationsSemiconductors20011 citations
    ABI

  14. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    ArticleMaterial Science and ThermodynamicsSemiconductors20041 citations
    ABI

  15. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    ArticleThin-Film Transistor TechnologiesSemiconductors19970 citations
    ABI

  16. Photoconductivity of sulfur-doped silicon near 10.6 µm

    Kh. B. Siyabekov, V. T. Tulanov

    ArticleThermography and Photoacoustic TechniquesSemiconductors19970 citations
    ABI

  17. Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors

    Alexander V. Kolobov, Kazunobu Tanaka

    ArticlePhase-change materials and chalcogenidesSemiconductors19980 citations
    ABI

  18. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    ArticleSemiconductor materials and interfacesSemiconductors19980 citations
    ABI

  19. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    K. M. Doshchanov

    ArticleThin-Film Transistor TechnologiesSemiconductors19980 citations
    ABI

  20. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

    С. И. Борисенко, G. F. Karavaev

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors19980 citations
    ABI

  21. Radiation defects in semiconductors under hydrostatic pressure

    V. N. Brudnyı̆

    ArticleRare-earth and actinide compoundsSemiconductors19990 citations
    ABI

  22. Photodetectors based on osmium-doped silicon

    Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

    ArticlePhotonic and Optical DevicesSemiconductors19990 citations
    ABI

  23. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

    N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

    ArticleRare-earth and actinide compoundsSemiconductors19990 citations
    ABI

  24. Theory of photovoltaic effects in crystals without an inversion center

    Rustam Yavkachovich Rasulov, Yu. E. Salenko, A. Tukhtamatov +2

    ArticleSolid-state spectroscopy and crystallographySemiconductors19990 citations
    ABI

  25. Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

    V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud +1

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors19990 citations
    ABI