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Semiconductors

118 works

Journal · ISSN 1063-7826

  1. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20144 citations
    ABI

  2. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    ArticleSemiconductor materials and interfacesSemiconductors20204 citations
    ABI

  3. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  4. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticlePhotonic and Optical DevicesSemiconductors20124 citations
    ABI

  5. Some features of photocurrent generation in single- and multibarrier photodiode structures

    A. V. Karimov, D. M. Yodgorova

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 citations
    ABI

  6. Features of the performance of a transient voltage suppressor in the pulsed mode

    A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

    ArticlePulsed Power Technology ApplicationsSemiconductors20133 citations
    ABI

  7. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20143 citations
    ABI

  8. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    ArticleZnO doping and propertiesSemiconductors20213 citations
    ABI

  9. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 citations
    ABI

  10. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20153 citations
    ABI

  11. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20083 citations
    ABI

  12. On the theory of the two-photon linear photovoltaic effect in n-GaP

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20163 citations
    ABI

  13. Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods

    S. S. Kurbanov, Ш.З. Уролов, Z. Sh. Shaymardanov +2

    ArticleZnO doping and propertiesSemiconductors20183 citations
    ABI

  14. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

    О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

    ArticleElectromagnetic Launch and Propulsion TechnologySemiconductors20002 citations
    ABI

  15. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    ArticleZnO doping and propertiesSemiconductors20072 citations
    ABI

  16. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    ArticleSemiconductor materials and interfacesSemiconductors20182 citations
    ABI

  17. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleSemiconductor materials and interfacesSemiconductors20202 citations
    ABI

  18. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI

  19. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    ArticleSurface and Thin Film PhenomenaSemiconductors20092 citations
    ABI

  20. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

    M. G. Dadamirzayev

    ArticleGyrotron and Vacuum Electronics ResearchSemiconductors20112 citations
    ABI

  21. Size Quantization in n-GaP

    Rustam Yavkachovich Rasulov, P. Ya. Rasulov, I. Éshboltaev +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI

  22. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  23. Electrical properties of semiconductors with pair defects

    Smagul Karazhanov, É. V. Kanaki

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  24. Diffusion of europium in silicon

    D. É. Nazyrov

    ArticleAdvanced Materials Characterization TechniquesSemiconductors20031 citations
    ABI

  25. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    ArticleGlass properties and applicationsSemiconductors20041 citations
    ABI