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Semiconductor materials and interfaces

771 works

  1. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    ArticleSemiconductor materials and interfaces20051 citations
    ABI

  2. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    ArticleSemiconductor materials and interfacesRussian Microelectronics20011 citations
    ABI

  3. Impurity thermovoltaic solar elements. Possible characteristics and alloying

    М. С. Саидов

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20091 citations
    ABI

  4. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20131 citations
    ABI

  5. Influence of structure defects on the radiation enhanced gold diffusion in silicon

    A. I. Koifman, N. Narkulov, Marat S. Yunusov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19751 citations
    ABI

  6. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

    D. A. Aronov, B. R. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19861 citations
    ABI

  7. The thermal expansion of disilicides of some transition metals

    L.F. Verkhorobin, N.N. Matyushenko

    ArticleSemiconductor materials and interfacesPowder Metallurgy and Metal Ceramics19640 citations
    ABI

  8. Planar Diode with a Thin Base

    Yurii R. Nosov

    ChapterSemiconductor Quantum Structures and Devices19690 citations
    ABI

  9. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions

    Yurii R. Nosov

    ChapterSemiconductor Quantum Structures and Devices19690 citations
    ABI

  10. Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

    O. A. Klimkova, O. R. Niyazova

    ChapterPulsed Power Technology Applications19710 citations
    ABI

  11. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    D. A. Aronov, Ya. P. Kotov

    ChapterSilicon and Solar Cell Technologies19710 citations
    ABI

  12. Radiation-enhanced diffusion - defect production ratio in γ-irradiated silicon detectors

    M. M. Zhits, O. A. Klimkova, O. R. Niyazova +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19720 citations
    ABI

  13. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

    D. A. Aronov, R. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19730 citations
    ABI

  14. A Scanning Electron Microscope Study of In[sub 1−x]Ga[sub x]P

    V. A. Voronin, W. D. JUN. STEWART, Grayson W. Marshall +3

    ArticleSurface and Thin Film PhenomenaJournal of The Electrochemical Society19740 citations
    ABI

  15. Kinetic properties of bismuth thin films

    Yu. F. Komnik, В. В. Андриевскии

    ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19750 citations
    ABI

  16. Some new properties of the volt-ampere characteristics of bismuth in strong crossed fields

    Yu. A. Bogod, Р. Г. Валеев, G. P. Onokienko

    ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19750 citations
    ABI

  17. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19750 citations
    ABI

  18. Magnetic-field dependence of the electron-phonon interaction in cadmium

    V. P. Naberezhnykh, V. V. Naberezhnykh, Β. I. Selyakov

    ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19750 citations
    ABI

  19. Effects of impurities on the residual electrical resistivity of indium and gallium

    Β. N. Aleksandrov, V. V. Dukin

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19760 citations
    ABI

  20. Influence of X-irradiation on silicon Schottky diodes

    U.A. Shakirov, Marat S. Yunusov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19760 citations
    ABI

  21. Effect of <i>B</i>-subgroup elements on residual electric resistivity of bivalent metals

    Β. N. Aleksandrov, V. V. Dukin

    ArticleElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics19760 citations
    ABI

  22. The low-temperature doping of silicon by radiation-induced diffusion

    A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19760 citations
    ABI

  23. Electrical conductivity of point microbridges and phonon and impurity spectroscopy in normal metals

    I. O. Kulik, A. N. Omel’yanchuk, R. I. Shekhter

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19770 citations
    ABI

  24. Linde's law in alloys of normal metals

    Β. N. Aleksandrov, V. V. Dukin

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19770 citations
    ABI

  25. Quantum size effect in bismuth-antimony alloy films

    E. I. Bukhshtab, Yu. V. Nikitin, Yu. F. Komnik

    ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19770 citations
    ABI