Semiconductor materials and interfaces

771 works

Electrical properties of thin bismuth-antimony films. IV. Temperature dependence
Yu. V. Nikitin, E. I. Bukhshtab, Yu. F. Komnik
ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19780 citations
ABI
One possibility of determining the parameters of the substitutional impurity model from low-temperature data
V. P. Tolstoluzhskii
ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19780 citations
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Dislocation superstructures and the kinetics of conduction electrons in semimetallic and semiconducting films
R. I. Shekhter, É. N. Bogachek, I. O. Kulik
ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19780 citations
ABI
Electrical properties of bismuth-antimony thin films. III. Quantum size effect
Yu. F. Komnik, Yu. V. Nikitin, E. I. Bukhshtab
ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19780 citations
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Proximity effect in lead/copper contacts
V. M. Svistunov, Mikhail Belogolovskii, V. Yu. Tarenkov +1
ArticleElectrical Contact Performance and AnalysisSoviet Journal of Low Temperature Physics19790 citations
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Effect of impurities on the residual resistance of niobium
Β. N. Aleksandrov, G. P. Kovtun, V. A. Elenskiǐ
ArticleMetal and Thin Film MechanicsSoviet Journal of Low Temperature Physics19790 citations
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The influence of the electric field on the structure of boron films
G. V. PANTELEEVA, V.V. Morozkin
ArticleBoron and Carbon Nanomaterials ResearchJournal of the Less Common Metals19790 citations
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Structural and activation characteristics of nickel creep in the temperature range from 4.2 to 140°K
V. K. Aksenov, I.A. Gindin, V.P. Lebedev +1
ArticleIntermetallics and Advanced Alloy PropertiesSoviet Journal of Low Temperature Physics19800 citations
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Influence of copper impurity and structure defects on the properties of compound CdSnAs2
Olga V. Voevodina, A. P. Vyatkin, T. V. Vedernikova +3
ArticleAdvanced Research in Systems and Signal ProcessingRussian Physics Journal19800 citations
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Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1?xSb
A. A. Vilisov, V. P. Germogenov, N. K. Маksimova +1
ArticleSemiconductor materials and interfacesRussian Physics Journal19800 citations
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Electron-phonon interaction in hydrostatically compressed indium–tin alloys
V. M. Mostovoǐ, Yu. F. Revenko
ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19810 citations
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Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions
B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1
ArticleSemiconductor materials and interfacesRussian Physics Journal19810 citations
ABI
Bias current in semiconductors during overcharging of impurity centres
B. B. Baizakov, R. A. Moominov, S. H. Shamirzaiev +1
ArticleAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19810 citations
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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors
В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6
ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 citations
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Interrelation of electrical, superconducting, and structural characteristics of low-temperature indium thin films
Б. И. Белевцев, V. V. Pilipenko, L. A. Yatsuk
ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19810 citations
ABI
Effect of isovalent impurities and pressure on the magnetic properties and the parameters of the energy spectrum of cadmium
G. E. Grechnev, I. V. Svechkarev
ArticleSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics19810 citations
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Temperature dependence of the resistance of Cu–Cu point contacts over the temperature range 1.5–100 °K
A. I. Akimenko, A. B. Verkin, N. M. Ponomarenko +1
ArticleElectronic Packaging and Soldering TechnologiesSoviet Journal of Low Temperature Physics19810 citations
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Observation of the Shubnikov–de Haas effect in thin bismuth films
Yu. F. Komnik, В. В. Андриевскии, А. В. Бутенко
ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19810 citations
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Internal friction anomaly in antimony due to transition of dislocations to the underdamped state
P. P. Pal‐Val, V. Ya. Platkov, V. I. Startsev
ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19810 citations
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Hydrogen determination in silicon nitride films by the nuclear recoil method
И. П. Чернов, V. N. Shadrin, Ju.P. Cherdantsev +4
ArticleSilicon and Solar Cell TechnologiesThin Solid Films19820 citations
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Microcontact spectroscopy of the electron-phonon interaction in the intermetallide Cu3Au
O. I. Shklyarevskiǐ, Yu. G. Naĭdyuk, I. K. Yanson
ArticleMetal and Thin Film MechanicsSoviet Journal of Low Temperature Physics19820 citations
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Thermal stability of optical properties of electron-irradiated GaAs
D. L. Budnitskii, M. A. Krivov
ArticleSemiconductor materials and interfacesRussian Physics Journal19820 citations
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Electrical properties of fine crystalline and amorphous metal films, obtained by low temperature condensation (Review)
Yu. F. Komnik
ArticleCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics19820 citations
ABI
Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure
С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1
ArticleSemiconductor materials and interfacesRussian Physics Journal19830 citations
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Effect of pressure and impurities on the electronic spectrum of cadmium
G. E. Grechnev
ArticleSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics19830 citations
ABI