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Works citing this work

58 works

Work: Physics of Semiconductor Devices

  1. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    ArticleSemiconductor materials and interfacesApplied Solar Energy20182 citations
    ABI

  2. The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures

    L. O. Olimov, B. M. Abdurakhmanov

    ArticleSemiconductor materials and interfacesAdvances in Energy and Power20132 citations
    ABI

  3. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20102 citations
    ABI

  4. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20132 citations
    ABI

  5. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    ArticleIndustrial Engineering and TechnologiesTechnical Physics Letters20081 citations
    ABI

  6. Calculation of resonance frequencies of electrons present in the contact area of two semiconductors

    Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov

    ArticleSemiconductor materials and interfacesRadioelectronics and Communications Systems20111 citations
    ABI

  7. Investigation of the heat transfer processes under the action of pulse power

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20121 citations
    ABI

  8. Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review

    R. R. Kabulov

    Review articleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20201 citations
    ABI

  9. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    ArticleChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20171 citations
    ABI

  10. The fabrication and investigation of n/CdS-p/CdTe-n/Si structures

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 citations
    ABI

  11. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20081 citations
    ABI

  12. Peculiarities of solar elements based on narrow-band-gap semiconductors

    М. С. Саидов

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20111 citations
    ABI

  13. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ChapterSemiconductor materials and interfacesInTech eBooks20111 citations
    ABI

  14. Energy levels and heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by some compounds of the II–V and II–VI types

    М. С. Саидов

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20101 citations
    ABI

  15. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20131 citations
    ABI

  16. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 citations
    ABI

  17. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

    N. A. Matchanov

    ArticleSemiconductor materials and interfacesTechnical Physics20080 citations
    ABI

  18. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 citations
    ABI

  19. Effect of γ-ray irradiation on large-block cadmium telluride structures

    S. A. Muzafarova, A. A. Usarov

    ArticleAdvanced Semiconductor Detectors and MaterialsAtomic Energy20080 citations
    ABI

  20. Photocurrent amplification effect of the fet gate p–n junction

    D. M. Edgorova

    ArticlePhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics20090 citations
    ABI

  21. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    ArticleSemiconductor materials and devicesSemiconductors20100 citations
    ABI

  22. White radiation upon breakdown of an nSi— pCdiamond heterojunction and upon limiting efficiency of a silicon solar element

    Timur Saliev, М. С. Саидов

    ArticleDiamond and Carbon-based Materials ResearchApplied Solar Energy20100 citations
    ABI

  23. Effect of Be codoping on the photoluminescence spectra of GaMnAs

    Fucheng Yu, P. B. Parchinskiy, Dojin Kim +3

    ArticleZnO doping and propertiesCurrent Applied Physics20100 citations
    ABI

  24. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    ArticleSemiconductor materials and interfacesSemiconductors20100 citations
    ABI

  25. Relaxation process features of photoconductivity in p-i-n structures

    R. A. Mumimov

    ArticleThin-Film Transistor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20100 citations
    ABI