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A. Yu. Leĭderman

Работ: 45

Starodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan

  1. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1987Цитирований: 8
    ABI

  3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  4. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  5. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
    ABI

  6. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 6
    ABI

  7. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
    ABI

  9. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (b)1968Цитирований: 5
    ABI

  10. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4
    ABI

  11. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2014Цитирований: 4
    ABI

  12. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2016Цитирований: 4
    ABI

  13. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4
    ABI

  14. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI

  15. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI

  16. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1981Цитирований: 3
    ABI

  17. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2012Цитирований: 3
    ABI

  18. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2017Цитирований: 2
    ABI

  19. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 2
    ABI

  20. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 1
    ABI

  21. The effect of impurity spectrum tailing on photocell characteristics

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2010Цитирований: 1
    ABI

  22. The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Sh. T. Manshurov

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 1
    ABI

  23. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  24. Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

    A. Yu. Leĭderman, M. M. Khashaev

    СтатьяOptical and Acousto-Optic TechnologiesApplied Solar Energy2013Цитирований: 1
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
    ABI