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Semiconductor materials and devices

Работ: 277

  1. Observation of the Shubnikov–de Haas effect in thin bismuth films

    Yu. F. Komnik, В. В. Андриевскии, А. В. Бутенко

    СтатьяCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI

  2. Transient effects in thin aluminum films in the resistive state

    V. V. Stupakov, V. Yu. Tarenkov

    СтатьяQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI

  3. Hydrogen determination in silicon nitride films by the nuclear recoil method

    И. П. Чернов, V. N. Shadrin, Ju.P. Cherdantsev +4

    СтатьяSilicon and Solar Cell TechnologiesThin Solid Films1982Цитирований: 0
    ABI

  4. Critical currents in columnar vanadium films

    V. G. Cherkasova, A. E. Kolinko, A. E. Slatin +1

    СтатьяPhysics of Superconductivity and MagnetismSoviet Journal of Low Temperature Physics1982Цитирований: 0
    ABI

  5. Thermal stability of optical properties of electron-irradiated GaAs

    D. L. Budnitskii, M. A. Krivov

    СтатьяSemiconductor materials and interfacesRussian Physics Journal1982Цитирований: 0
    ABI

  6. Electrical properties of fine crystalline and amorphous metal films, obtained by low temperature condensation (Review)

    Yu. F. Komnik

    СтатьяCopper Interconnects and ReliabilitySoviet Journal of Low Temperature Physics1982Цитирований: 0
    ABI

  7. Nonlinear current-voltage characteristic of a S–<i>c</i>–N type microcontact

    V. A. Khlus

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1983Цитирований: 0
    ABI

  8. Effect of grain boundary scattering on the TCR of thin tin films

    C. R. Pichard, Yu. F. Komnik, Б. И. Белевцев +1

    СтатьяCopper Interconnects and ReliabilityJournal of Materials Science Letters1983Цитирований: 0
    ABI

  9. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

    С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

    СтатьяSemiconductor materials and interfacesRussian Physics Journal1983Цитирований: 0
    ABI

  10. Electron–phonon interaction-induced nonlinearity of the current–voltage characteristic of superconductor–normal-metal point contacts

    I. K. Yanson, Г. В. Камарчук, A. V. Khotkevich

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1984Цитирований: 0
    ABI

  11. A secondary ion mass spectrometry study of two-layer systems based on tellurium

    В. А. Лабунов, B. Kolosnicin, D. Marton +1

    СтатьяPhase-change materials and chalcogenidesThin Solid Films1984Цитирований: 0
    ABI

  12. Nonlinear conductivity in island bismuth films

    А. В. Бутенко, E. I. Bukhshtab, V. V. Pilipenko

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1985Цитирований: 0
    ABI

  13. Two-dimensional charge layer at the boundary between two insulators

    Yu. Z. Kovdrya

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignSoviet Journal of Low Temperature Physics1985Цитирований: 0
    ABI

  14. Investigation of crystal structure of cubic silicon carbide layers

    М. С. Саидов, Kh. A. Shamuratov, Marsel Kadyrov +1

    СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1986Цитирований: 0
    ABI

  15. Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP

    V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3

    СтатьяSemiconductor materials and devicesphysica status solidi (a)1986Цитирований: 0
    ABI

  16. Localization and inelastic scattering of electrons in point-contact electric conductivity

    I. F. Itskovich, I. O. Kulik, R. I. Shekhter

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1987Цитирований: 0
    ABI

  17. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

    Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

    СтатьяDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)1987Цитирований: 0
    ABI

  18. Ion-Molecular Epitaxy

    A. Lyutovich

    ГлаваSemiconductor materials and devices1987Цитирований: 0
    ABI

  19. Two-dimensional electron gas oscillations in the inversion layer on the surface of an ionic crystal

    A. M. Kosevich, J. C. Granada

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1988Цитирований: 0
    ABI

  20. Vanadium diffusion in silicon

    G.K. Azimov, S.Z. Zajnabidinov, Yu. I. Kozlov

    СтатьяAdvanced Materials Characterization Techniques1989Цитирований: 0
    ABI

  21. Metallic point contacts in a pseudoballistic regime. Phonon generation and electron drag

    A. G. Shkorbatov, T. Z. Sarkisyants

    СтатьяForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics1989Цитирований: 0
    ABI

  22. The Aharonov–Bohm effect in narrow-band semiconductors

    É. N. Bogachek

    СтатьяQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics1990Цитирований: 0
    ABI

  23. Two-dimensional charge systems in metal-insulator-insulator structures

    Yu. Z. Kovdrya

    СтатьяSemiconductor materials and devicesSoviet Journal of Low Temperature Physics1990Цитирований: 0
    ABI

  24. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

    S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

    СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1991Цитирований: 0
    ABI

  25. IVC studies for <i>S–c–N</i> contacts based on the amorphous superconductor Zr2Ni

    Yu. G. Naĭdyuk, O. E. Kvitnitskaya

    СтатьяInorganic Chemistry and MaterialsSoviet Journal of Low Temperature Physics1991Цитирований: 0
    ABI