Работы, цитирующие эту работу

Работ: 12

Работа: Method for additional purification of the surface of Si(111) single crystal

1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

   Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.095303

2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.258448

3. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

   Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

   СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.104968

4. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   СтатьяIon-surface interactions and analysisE3S Web of Conferences2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.144489

5. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.232444

6. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

   Gunel Imanova, I. R. Bekpulatov

   СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002486

7. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

   Y. S. Ergashov, S. B. Donaev

   СтатьяIon-surface interactions and analysisJournal of Nano- and Electronic Physics2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.095304

8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.558588

9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.571863

10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0

    ABIABI:AkademIndex/openalex/2022.article.002267

11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2022Цитирований: 0

    ABIABI:AkademIndex/openalex/2022.article.010500

12. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 0

    ABIABI:AkademIndex/openalex/2023.article.006628