Работы, на которые ссылается эта работа

Работ: 20

Работа: Electrodifusion of Manganese Atoms in Silicon

Silicon with binary elementary cells as a novel class of materials for future photoenergetics
М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1
СтатьяSemiconductor materials and interfacesApplied Solar Energy2015Цитирований: 13
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Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms
М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1
СтатьяSemiconductor materials and interfacesSemiconductors2021Цитирований: 8
ABI
SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY
Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2
СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
ABI
Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics
Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8
ABI
A Surface Study of Si Doped Simultaneously with Ga and Sb
X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2
СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7
ABI
X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique
Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
ABI
Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms
Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev
СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5
ABI
Optical Properties of GexSi1 – x Binary Compounds in Silicon
Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1
СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5
ABI
Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases
Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1
Статья2017Цитирований: 5
ABI
Solid Solubilities of Impurity Elements in Germanium and Silicon*
F. A. Trumbore
Статья1960Цитирований: 4
ABI
Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications
Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh
Статья2017Цитирований: 3
ABI
Deep impurity levels and diffusion coefficient of manganese in silicon
H. Nakashima, Kazuhito Hashimoto
Статья1991Цитирований: 3
ABI
Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application
Jing Liu, Shuaipeng Yue
Статья2022Цитирований: 3
ABI
The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice
Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2
ABI
New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V
N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics2023Цитирований: 2
ABI
On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study
Michael Niehle, Jean‐Baptiste Rodriguez, L. Cerutti +2
Статья2017Цитирований: 2
ABI
Theoretical analysis and modelling of degradation for III–V lasers on Si
Jianzhuo Liu, Mingchu Tang, Huiwen Deng +7
Статья2022Цитирований: 2
ABI
Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)
Ahmad Mostafa, Mamoun Medraj
Обзорная статья2017Цитирований: 2
ABI
Без названия
ДругоеЦитирований: 1
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Без названия
ДругоеЦитирований: 1
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